Citation Impact
Citing Papers
LAMMPS - a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales
2021 Standout
Nanometre-scale electronics with III–V compound semiconductors
2011 Nature
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
Cubic/Tetragonal Phase Stabilization in High-κ ZrO2 Thin Films Grown Using O3-Based Atomic Layer Deposition
2011
Charge-optimized many-body potential for the hafnium/hafnium oxide system
2010
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
State of the Art and Prospects in Metal–Organic Framework (MOF)-Based and MOF-Derived Nanocatalysis
2019 Standout
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
2010
Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
2017 StandoutNobel
Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties
2011
Catalysis with Two-Dimensional Materials Confining Single Atoms: Concept, Design, and Applications
2018
Applications of 2D MXenes in energy conversion and storage systems
2018 Standout
Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation
2017
III–V compound semiconductor transistors—from planar to nanowire structures
2014
Works of Scott Monaghan being referenced
Rhenium-doped MoS2 films
2017
Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors
2011
Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation
2008
A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
2011
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
2016
Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
2009
$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications
2009
Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods
2009