Citation Impact

1 standout

Citing Papers

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
2008 Standout
1 intermediate paper

Works of S. Willard being referenced

New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress
1993

Author Peers

Author EEE NHEP Radiation Last Decade Papers Cites
S. Willard 38 20 11 4 42
Leon C. Boyd 1 12 462
Michael A. Gurdon 6 14 9.8k
Junko Kusumi 40 499
Chuanyin Liu 317 23 481
Daniel Armeanu 38 26 667

All Works

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