Standout Papers
Citation Impact
Citing Papers
Dynamic optical response of solids following 1-fs-scale photoinjection
2023 StandoutNatureNobel
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
1995 StandoutNobel
Abinitiostudy of oxygen point defects in GaAs, GaN, and AlN
1996
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of theO P
1998 StandoutNobel
Stability of deep donor and acceptor centers in GaN, AlN, and BN
1997
Growth and applications of Group III-nitrides
1998
Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
1993
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
1999
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
1997 StandoutNobel
1998
Surface and bulk electronic structure of thin-film wurtzite GaN
1997
Excitonic emissions from hexagonal GaN epitaxial layers
1996 StandoutNobel
Stability of surface reconstructions on hexagonal GaN grown by molecular beam epitaxy
1997
The piezoelectric coefficient of gallium nitride thin films
1998
Structural and vibrational properties of GaN
1999 StandoutNobel
Elastic constants of gallium nitride
1996
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
1994 StandoutNobel
Growth of ZnO on Sapphire (0001) by the Vapor Phase Epitaxy Using a Chloride Source
1999
Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures
1997
Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy
1996
Elastic constants of III - V compound semiconductors: modification of Keyes' relation
1996
Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer
2000
Structural defects and microstrain in GaN induced by Mg ion implantation
1998
Brillouin scattering study of gallium nitride: elastic stiffness constants
1997
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
Doping properties of C, Si, and Ge impurities in GaN and AlN
1997
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
1996 StandoutNobel
Compositionally Dependent Band Offsets In Aln/AlxGa1-xN Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy
1997
Electronic structure, surface composition and long-range order in GaN
1993
Combined HREELS/LEED study on the oxidation of GaN surfaces
1999
Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition
1996
Growth of GaN by ECR-assisted MBE
1993
Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron
1994
Growth of thin Ni films on GaN(0001)-(1×1)
1993
Density of states, hybridization, and band-gap evolution inAl x Ga 1 − x N
1998
Optical phonons in GaN
1996 StandoutNobel
Reconstructions of theGaN ( 000 1 ¯ )
1997
Nitride-based semiconductors for blue and green light-emitting devices
1997 Nature
Implantation and redistribution of dopants and isolation species in GaN and related compounds
1995
A comprehensive review of ZnO materials and devices
2005 Standout
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields
1999
Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1−xGaxN multiple quantum wells
1997
Native Defects in Wurtzite GaN And AlN
1994
Band gaps of GaPN and GaAsN alloys
1997
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Plasma-assisted molecular beam epitaxy of ZnO thin films on sapphire substrates with an MgO buffer
2001
Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering
2000
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes
1995 Science
Electronic states and effective negative electron affinity at cesiated p-GaN surfaces
1999
Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE
1998
Small valence-band offsets at GaN/InGaN heterojunctions
1997
Magnesium acceptor levels in GaN studied by photoluminescence
1998
Characterization of an AlGaN/GaN two-dimensional electron gas structure
2000
Depletion region effects in Mg-doped GaN
2000
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
1995 StandoutNobel
Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies
1997
X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
1998
Valence-band offsets and different band-gap behaviors of (β-GaN)/(β-AlN) superlattice and (α-GaN)/(α-AlN) superlattice
1996
Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
1997
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Recovery of Structural Defects in GaN After Heavy Ion Implantation
1997 StandoutNobel
Residual Native Shallow Donor in ZnO
1999
III–V nitride based light-emitting devices
1997 StandoutNobel
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Bowing parameter of the band-gap energy of GaNxAs1−x
1997
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Optical gain of strained wurtzite GaN quantum-well lasers
1996
Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
1997
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
1999 StandoutNobel
Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h
1999
Zone-center optical phonons in wurtzite GaN and AlN
1997
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
1996 StandoutNobel
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1−xAlxN
1996
Optical properties of GaN epilayers on sapphire
1996
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Phonon excitations and related thermal properties of aluminum nitride
1998
Emission channeling studies of Li in semiconductors
1997
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy
2005
1.54-μm photoluminescence from Er-implanted GaN and AlN
1994
The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation
1998
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
III–nitrides: Growth, characterization, and properties
2000
Envelope-function formalism for valence bands in wurtzite quantum wells
1996
Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces
1994
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
1997 StandoutNobel
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
2002 StandoutNobel
Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy
1997
UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC
1996 StandoutNobel
Optical and electronic-structure study of cubic and hexagonal GaN thin films
1995
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate
1997
N incorporation in InP and band gap bowing of InNxP1−x
1996
Optically pumped lasing of ZnO at room temperature
1997 Standout
Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy
1996 StandoutNobel
Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition
1996
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN
1994
Optical gain in wide bandgap GaN quantum well lasers
1996
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
1996 StandoutNobel
Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence
1996
Optical properties near the band gap on hexagonal and cubic GaN
1994
Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures
2000
Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaN
1994
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
1996
Intrinsic exciton transitions in GaN
1998 StandoutNobel
GaN: Processing, defects, and devices
1999
Determination of wurtzite GaN lattice polarity based on surface reconstruction
1998
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
1998
Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
1993
The growth and properties of Al and AlN films on GaN(0001)–(1×1)
1996
Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
1997 StandoutNobel
Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition
2000
MBE growth and properties of ZnO on sapphire and SiC substrates
1996
Electronic, optical, and structural properties of some wurtzite crystals
1993
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy
1995
Properties of Si donors and persistent photoconductivity in AlGaN
1998
Theory of Point Defects and Complexes in GaN
1995
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
1995
Electronic structure calculations on nitride semiconductors
1999
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
InGaN-based blue laser diodes
1997 StandoutNobel
Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN
1996
The optical properties and electronic transitions of cubi and hexagonal GaN films between 1.5 and 10 eV
1995
Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy
1996
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition
1996
Growth of Al In1−N single crystal films by microwave-excited metalorganic vapor phase epitaxy
1995
Composition and structure of the GaN{0001¯}-(1×1) surface
1996
Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
1998
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Band structure and spatial charge distribution in AlxGa1−x N
2000
Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
1993
Free Excitons in GaN
1996 StandoutNobel
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy
1998 Nobel
Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga1-xInxN Calculated by the Tight-Binding Method
1995
Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system
1998
Lattice site location studies of ion implanted Li8 in GaN
1998 StandoutNobel
Thin polycrystalline zinc oxide films obtained by oxidation of metallic zinc films
2004
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
1997 StandoutNobel
Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction
1998
Shallow donors in GaN—The binding energy and the electron effective mass
1995 StandoutNobel
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997 StandoutNobel
Petahertz optical drive with wide-bandgap semiconductor
2016
Electron-beam-induced optical memory effects in GaN
2002 StandoutNobel
Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
2003
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
1998 StandoutNobel
Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature
1997
Growth and characterization of cubic GaN
1997
Hydrogenation of GaN, AlN, and InN
1994
Polarized Raman spectra in GaN
1995 StandoutNobel
Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
1997 StandoutNobel
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
Towards the Identification of the Dominant Donor in GaN
1995
Deep level defects in n-type GaN
1994 StandoutNobel
Electronic properties and strain effects in zinc blende GaN and InN
1999
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Piezoelectric coefficient of GaN measured by laser interferometry
1999
Valence-band splitting and shear deformation potential of diluteGaAs 1 − x N x
2000
Acceptor binding energy in GaN and related alloys
1995
Study of oxygen chemisorption on the GaN(0001)-(1×1) surface
1996
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
Optical and structural properties of III-V nitrides under pressure
1994
Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
1998
Brillouin scattering study in the GaN epitaxial layer
1996 StandoutNobel
Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy
1993
Observation of highly dispersive surface states on GaN(0001)1×1
1999 StandoutNobel
InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
1993 StandoutNobel
Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method
1995
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
1998 StandoutNobel
k⋅p method for strained wurtzite semiconductors
1996
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
1997
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of S. Strite being referenced
X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3dstates in GaN
1994
Electrical properties of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures
1991
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
1998
GaN, AlN, and InN: A review
1992 Standout
GaN grown on hydrogen plasma cleaned 6H-SiC substrates
1993
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
1997
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy
1991
Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
1994
Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy
1995
Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe
1993
Properties of InGaN deposited on Glass at Low Temperature
1997
Photoluminescence of zinc-blende GaN under hydrostatic pressure
1994
Properties of Zn Implanted GaN
1995
Progress and prospects for GaN and the III–V nitride semiconductors
1993
Refractive indices of wurtzite and zincblende GaN
1993
Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
1997
GaN Core Relaxation Effects and Their Ramifications for P-Type Doping
1994