Citation Impact
Citing Papers
Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys
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Stable room-temperature continuous-wave lasing in quasi-2D perovskite films
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Detective quantum efficiency of electron area detectors in electron microscopy
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High dielectric constant oxides
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Band lineups and deformation potentials in the model-solid theory
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Carrier transport in mesoscopic silicon-coupled superconducting junctions
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An (Al,Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter
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Intriguing Optoelectronic Properties of Metal Halide Perovskites
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Discovery-based design of transparent conducting oxide films
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Lattice Compression from Conduction Electrons in Heavily Doped Si:As
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Electronic structure, properties, and phase stability of inorganic crystals: A pseudopotential plane-wave study
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Point defects and dopant diffusion in silicon
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Deformation twinning
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Grain boundaries in semiconductors
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Contact resistance of superconductor-semiconductor interfaces: The case of Nb-InAs/AlSb quantum-well structures
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Advanced Thermoelectric Design: From Materials and Structures to Devices
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Silicon nanowires for sequence-specific DNA sensing: device fabrication and simulation
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A fast and robust algorithm for Bader decomposition of charge density
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Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures
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Transport phenomena in nanofluidics
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Resistivity of polycrystalline zinc oxide films: current status and physical limit
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Improved quantitative description of Auger recombination in crystalline silicon
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The maximum possible conversion efficiency of silicon-germanium thermoelectric generators
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High dielectric constant gate oxides for metal oxide Si transistors
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Metal oxide-based gas sensor research: How to?
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Atomic Configurations and Energetics of Arsenic Impurities in a Silicon Grain Boundary
1998
Quantum Monte Carlo simulations of solids
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Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide
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Characterization of Lorenz number with Seebeck coefficient measurement
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Fermi-Level-Pinning Defects in Highlyn-Doped Silicon
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Rationally Designing High-Performance Bulk Thermoelectric Materials
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Advances in crystalline silicon solar cell technology for industrial mass production
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Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping
1983
Low dielectric constant polymers for microelectronics
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Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Approaching the Minimum Thermal Conductivity in Rhenium‐Substituted Higher Manganese Silicides
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A unified mobility model for device simulation—I. Model equations and concentration dependence
1992
Applications of 2D MXenes in energy conversion and storage systems
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Superconductivity and the Josephson effect in a periodic array of NbInAsNb junctions
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Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects
2017 StandoutNobel
Model describing phosphorus diffusion gettering of transition elements in silicon
1990
Rapid isothermal processing
1988
Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
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Multi-electrode substrate for selectivity enhancement in air monitoring
1997
Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
2003
A direct measurement of interfacial contact resistance
1982
Material and process limits in silicon VLSI technology
2001
Past achievements and future challenges in the development of optically transparent electrodes
2012 Standout
Dopant local bonding and electrical activity near Si(001)-oxide interfaces
2005 StandoutNobel
Impurity‐to‐efficiency simulator: predictive simulation of silicon solar cell performance based on iron content and distribution
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Charge diffusion in undepleted regions of silicon particle detectors: analysis and simulation
2004
Works of S. Solmi being referenced
Oxidation-rate dependence of phosphorus diffusivity in silicon
1976
High-concentration boron diffusion in silicon: Simulation of the precipitation phenomena
1990
Transient enhanced diffusion of dopants in silicon induced by implantation damage
1986
Electrical Properties and Stability of Supersaturated Phosphorus‐Doped Silicon Layers
1981
Role of a polysilicon layer in the reduction of lattice defects associated with phosphorus predeposition in silicon
1980
Kinetics of Phosphorus Predeposition in Silicon Using POCl3
1975
Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in Silicon
1983
On phosphorus diffusion in silicon under oxidizing atmospheres
1973
Temperature and Time Dependence of Dopant Enhanced Diffusion in Self‐Ion Implanted Silicon
1987
GRAIN BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC
1982
Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy
2008
Electrical Properties of Thermally and Laser Annealed Polycrystalline Silicon Films Heavily Doped with Arsenic and Phosphorus
1982
Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon
1994
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
1983
Aluminum-silicon ohmic contact on “shallow” junctions
1980
Influence of implant induced vacancies and interstitials on boron diffusion in silicon
1987
Influence of nucleation on the kinetics of boron precipitation in silicon
1987
Precipitation and Diffusivity of Arsenic in Silicon
1985
Influence of Precipitation on Phosphorus Diffusivity in Silicon
1986
Electron Microscopy of As Supersaturated Silicon
1986
High-temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended x-ray absorption fine structure
1996
Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon
1982
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
1996
Electrical activation of boron-implanted silicon during rapid thermal annealing
1988
Deactivation Kinetics in Heavily Arsenic‐Doped Silicon
1999
Damaged and reconstructed regions in silicon after heavy arsenic implantation
1984