Citation Impact
Citing Papers
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
2011 StandoutNobel
Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters
2012 StandoutNobel
Narrow-band red-emitting Sr[LiAl3N4]:Eu2+ as a next-generation LED-phosphor material
2014 Standout
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
2012
Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes
2016
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
2010
Relaxation of compressively-strained AlGaN by inclined threading dislocations
2005
Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
2004 StandoutNobel
Advances in group III-nitride-based deep UV light-emitting diode technology
2010 Standout
Insights into the electronic properties of InGaAsN: the effect of nitrogen from band structure to devices
2002
Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
2017
Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes
2017
A review of Ga2O3 materials, processing, and devices
2018 Standout
Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire
2005
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Investigation of Bismuth Triiodide (BiI3) for Photovoltaic Applications
2015 StandoutNobel
Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
2010 StandoutNobel
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
2005
200 nm deep ultraviolet photodetectors based on AlN
2006
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
2012 StandoutNobel
High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer
2009 StandoutNobel
Magneto-optical and light-emission properties of III As N semiconductors
2002
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Diagnostic architecture: A procedure based on the analysis of the failure causes applied to photovoltaic plants
2015
High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
2006 StandoutNobel
Fault detection and monitoring systems for photovoltaic installations: A review
2017
AlGaN Deep-Ultraviolet Light-Emitting Diodes
2005
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
2004
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
2011 StandoutNobel
Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3<x<0.5)
2005
Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes
2014 StandoutNobel
Nitride deep-ultraviolet light-emitting diodes with microlens array
2005
Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE
2006 StandoutNobel
Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates
2006
Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
2011
Deep ultraviolet light‐emitting diodes
2006
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications
2016 Standout
Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut
2015 Standout
High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
2007 StandoutNobel
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
2011
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
2013 StandoutNobel
Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE
2008 StandoutNobel
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
2010
Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes
2012 StandoutNobel
Simulation of visible and ultra-violet group-III nitride light emitting diodes
2005
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
2011 StandoutNobel
Energy band offsets of dielectrics on InGaZnO4
2017
Droop improvement in high current range on PSS-LEDs
2011 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Increased power from deep ultraviolet LEDs via precursor selection
2006
Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications
2006
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
2011 StandoutNobel
Confocal microphotoluminescence of InGaN-based light-emitting diodes
2005
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
2012 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
2011 StandoutNobel
III N V semiconductors for solar photovoltaic applications
2002
A comprehensive review on protection challenges and fault diagnosis in PV systems
2018 Standout
Mg‐doped high‐quality AlxGa1–xN (x=0‐1) grown by high‐temperature metal‐organic vapor phase epitaxy
2007 StandoutNobel
Fault detection and diagnosis methods for photovoltaic systems: A review
2018 Standout
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
2017
Wide-bandgap semiconductor materials: For their full bloom
2015
Correlation between optical and electrical properties of Mg-doped AlN epilayers
2006
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Ultraviolet semiconductor laser diodes on bulk AlN
2007
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
2007
Measurement of charge-separation potentials in GaAs1−xNx
2003
III–Nitride UV Devices
2005
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Novel UV devices on high-quality AlGaN using grooved underlying layer
2009 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Impact of Small Miscuts of (0001) Sapphire on the Growth of AlxGa1-xN/AlN
2005
Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
2006 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Tuning the Optical Properties of Cesium Lead Halide Perovskite Nanocrystals by Anion Exchange Reactions
2015 Standout
Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
2005
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2014 Standout
Works of Robert Kaplar being referenced
Optimization and performance of AlGaN-based multi-quantum-well deep-UV LEDs
2004
Extraction of trapped charge in 4H-SiC metal oxide semiconductor field effect transistors from subthreshold characteristics
2011
Optical and electrical step-recovery study of minority-carrier transport in an InGaN∕GaN quantum-well light-emitting diode grown on sapphire
2004
Deep levels in p-type InGaAsN lattice matched to GaAs
1999
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
2004
Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content
2015
An AlN/Al0.85Ga0.15N high electron mobility transistor
2016
Switching characterization of vertical GaN PiN diodes
2016
Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
2001
Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN
2016
High voltage and high current density vertical GaN power diodes
2016
Deep levels and their impact on generation current in Sn-doped InGaAsN
2001
PV inverter performance and reliability: What is the role of the IGBT?
2011