Citation Impact
Citing Papers
Probing carrier lifetimes in photovoltaic materials using subsurface two-photon microscopy
2013
Uncovering temperature-dependent exciton-polariton relaxation mechanisms in hybrid organic-inorganic perovskites
2023 StandoutNobel
Metal-halide perovskites for photovoltaic and light-emitting devices
2015 Standout
Atomically thin p–n junctions with van der Waals heterointerfaces
2014 Standout
Theoretical and Experimental Estimations of Photon Recycling Effect in Light Emitting Devices with a Metal Mirror
1996
Derivative transmission measurements of the temperature dependance of the Γ-Γ transition in the Ga0.73In0.27As0.59P0.41 compound
1981
Comparing organic to inorganic photovoltaic cells: Theory, experiment, and simulation
2003
An experimental determination of the effective masses for GaxIn1−xAsyP1−y alloys grown on InP
1979
Photovoltaic materials: Present efficiencies and future challenges
2016 StandoutScience
Cyclotron resonance in n-type In1−xGaxAsyP1−y
1979 StandoutNobel
Enhanced Dye-Sensitized Photoconversion Efficiency via Reversible Production of UV-Induced Surface States in Nanoporous TiO2
2003
Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
1980
Characteristics and Optimum Operating Parameters of a Gyrotron Traveling Wave Amplifier
1979
Photon recycling in lead iodide perovskite solar cells
2016 Science
Structural properties of heteroepitaxial Ge films on a Si(100)-2×1 surface
1988
Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell
1988
Growth of GaAs on Si and its Application to FETs and LEDs
1986
Optical properties of high-quality InGaAs/InAlAs multiple quantum wells
1991 StandoutNobel
State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point
2019
Optical properties ofIn 1 − x Ga x As y P 1 − y
1982
GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
2013 StandoutNobel
Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs
1990 StandoutNobel
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
1985
Deep levels in InxGa1-xAsyP1-ygrown on (100) GaAs by LPE
1989 StandoutNobel
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
1980
The Structure of GaAs/Si(211) Heteroepitaxial Layers
1987 StandoutNobel
Material parameters of In1−xGaxAsyP1−y and related binaries
1982
Organic solar cells: An overview
2004 Standout
Rotational slip in III-V heterostructures grown by molecular-beam epitaxy
1988 StandoutNobel
Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy
1989 StandoutNobel
Cyclotron resonance and the magnetophonon effect in GaxIn1−xAsyP1−y
1980
Characteristics of GaAs/AlGaAs heterostructures grown by liquid-phase epitaxy on molecular-beam-coated GaAs on Si
1988
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
1986 StandoutNobel
Continuous‐Wave Lasing in Cesium Lead Bromide Perovskite Nanowires
2017 StandoutNobel
Electroreflectance of In0.79Ga0.21As0.54P0.46
1978
Far-infrared spectroscopic study ofIn 1 − x Ga x As y P 1 − y
1980
Molecular-beam-epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
1986 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
The electron cyclotron maser
2004 Standout
Electron effective mass in InuGa1−uPvAs1−v for 0 ≤ v ≤ 1
1980
Lattice vibrations of In1−xGaxAsyP1−y quaternary compounds
1978
Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
1984
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
An improved solar cell circuit model for organic solar cells
2005
The electron effective mass in In1−xGaxAsyP1−y
1980
A comprehensive review on protection challenges and fault diagnosis in PV systems
2018 Standout
Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects
2017 StandoutNobel
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers
1988 StandoutNobel
High-Efficiency Perovskite Solar Cells
2020 Standout
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
1984
Hydrogenation of GaAs on Si: Effects on diode reverse leakage current
1987
Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
1984
Optical properties of metallic films for vertical-cavity optoelectronic devices
1998 Standout
A surface science perspective on TiO2 photocatalysis
2011 Standout
Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs
1983
Field effect on thermal emission from the 0.40 eV electron level in InGaP
1993 StandoutNobel
Highly efficient GaAs solar cells by limiting light emission angle
2013
Selective vapor-phase deposition on patterned substrates
1990
Hydrogen interactions with defects in crystalline solids
1992 Standout
Titanium Dioxide Nanomaterials: Synthesis, Properties, Modifications, and Applications
2007 Standout
Theory of electron cyclotron maser interaction in a cavity at the harmonic frequencies
1978
Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
1990 Standout
Cyclotron resonance interaction †
1972
MBE Growth of GaAs on Si: Problems and Progress
1986 StandoutNobel
Photoluminescence of AlxGa1−xAs alloys
1994
Molecular beam epitaxial growth of GaAs on Si(211)
1985 StandoutNobel
Polar-on-nonpolar epitaxy
1987 StandoutNobel
One-Dimensional Highly-Confined CsPbBr3 Nanorods with Enhanced Stability: Synthesis and Spectroscopy
2022 StandoutNobel
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility
1993 StandoutNobel
Works of R.E. Hayes being referenced
Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling
1989
Relativistic effect in electron cyclotron transverse wave devices
1969
Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics
1998
Measurement of effective mass in In0.9Ga0.1As0.22P0.78 by Shubnikov–de Haas oscillations
1978
Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy
1984
A stability criterion for tunnel diode interconnect junctions in cascade solar cells
1985
Observation of the transferred-electron effect in GaxIn1−xAsyP1−y
1977
Effect of multiple reflection propagation on photon recycling in GaAs/AlGaAs double heterostructures
1994
Selective patterning of single-crystal GaAs/Ge structures on Si substrates by molecular beam epitaxy
1985
Numerical modeling of energy balance equations in quantum well Al/sub x/Ga/sub 1-x/As/GaAs p-i-n photodiodes
2000