Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Theoretical Chemistry of Gold
2004 Standout
Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films
2011 Standout
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Maskless pendeo-epitaxial growth of GaN films
2002 StandoutNobel
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
2010 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si
2002
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Photocatalytic activity of gallium nitride for producing hydrogen from water under light irradiation
2006
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
2002 StandoutNobel
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
Characterization of bulk AlN crystals with positron annihilation spectroscopy
2008
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
2009
GaN-Based RF Power Devices and Amplifiers
2008 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
2000
Wet etching of GaN, AlN, and SiC: a review
2005
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Photonic crystals in the optical regime â past, present and future
1999
GaN based nanorods for solid state lighting
2012
Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications
2011 StandoutNobel
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
2013 StandoutNobel
Water electrolysis: from textbook knowledge to the latest scientific strategies and industrial developments
2022 Standout
The growth of N-face GaN by MOCVD: effect of Mg, Si, and In
2004 StandoutNobel
High temperature nucleation and growth of GaN crystals from the vapor phase
2002 StandoutNobel
Prismatic stacking faults in epitaxially laterally overgrown GaN
2006
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
2002 StandoutNobel
Functional Perovskites – From Epitaxial Films to Nanostructured Arrays
2008
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
2007 StandoutNobel
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes
2006
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures
2008
Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
2013 StandoutNobel
Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
2013 Standout
Excellent crystallinity of truly bulk ammonothermal GaN
2008
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Fabrication of photonic crystals for the visible spectrum by holographic lithography
2000 StandoutNature
Multiphoton Absorbing Materials: Molecular Designs, Characterizations, and Applications
2008 Standout
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
2002
Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN
2002
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations
2009 StandoutNobel
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
2009
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Structural, Dynamic, and Theoretical Studies of [AunPt2(PPh3)4(μ-S)2-n(μ3-S)nL][PF6]n [n = 1, L = PPh3; n = 2, L = Ph2PCH2PPh2, (C5H4PPh2)2Fe]
2000
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
Ge doped GaN with controllable high carrier concentration for plasmonic applications
2013
Low valent coinage metal coordination compounds with group 15, 16 and 17 donors
1997
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction
2007
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
2007
Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
2007
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
2010
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
Semiconductor thermochemistry in density functional calculations
2008
Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues
2009
Growth and characterization of N-polar InGaN∕GaN multiquantum wells
2007
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Electrical characteristics of contacts to thin film N-polar n-type GaN
2008
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Surface morphology of homoepitaxial GaN grown on non‐ and semipolar GaN substrates
2011
Works of P.R. Hageman being referenced
Heterometallic Pt-Au complexes with μ-3 S bridging. Syntheses and structures of Pt2 (PPh3)4(μ-SAuCl)2·2CH2Cl2 and Pt2(PPh3)4−(μ-S)(μ-SAuPPh3)NO3·0.5H2O
1986
Complementary study of defects in GaN by photo-etching and TEM
2002
Investigations of GaN surface quantum well in AlGaN∕GaN transistor heterostructures by contactless electroreflectance spectroscopy
2006
Structure and morphology of epitaxial PbZrO3 films grown by metalorganic chemical vapor deposition
2002
Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers
2006
n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy
2004
Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy
2003
Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits
2009
Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities
2000
Homo-epitaxial growth on misoriented GaN substrates by MOCVD
2000
Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN
2001
The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations
2004
Photoreflectance investigations of a donor-related transition in AlGaN∕GaN transistor structures
2005
Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy
1997
Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy
2001
Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas
2007
Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
1999
Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
2005
Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE
2002
Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy
2001
High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer
2001
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
2000
The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN
2002
Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy
1996
Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate
1997
Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals
2003
Interface-induced conversion of infrared to visible light at semiconductor interfaces
1996
Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy
2003