Citation Impact

Citing Papers

Towards Dynamic Control of Wettability by Using Functionalized Altitudinal Molecular Motors on Solid Surfaces
2013 StandoutNobel
A Novel Example of X‐Ray‐Radiation‐Induced Chemical Reduction of an Aromatic Nitro‐Group‐Containing Thin Film on SiO2 to an Aromatic Amine Film
2003
Electron photoemission from conducting nitrides (TiNx,TaNx) into SiO2 and HfO2
2005
Formation and Structure of Self-Assembled Monolayers
1996 Standout
Nano-Organometallics:  Heterogenizing Homogeneous Catalysts via Thin Film Methodology
2002
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2001
High dielectric constant oxides
2004 Standout
Mild Ti-mediated transformation of t-butyl thio-ethers into thio-acetates
2014 StandoutNobel
Monolayers of 11-trichlorosilylundecyl thioacetate: A system that promotes adhesion between silicon dioxide and evaporated gold
1989
Electrical properties of heavily doped polycrystalline silicon-germanium films
1994
Organic materials for reversible optical data storage
1993 StandoutNobel
Hole Transport Polymers with Improved Interfacial Contact to the Anode Material
2000 StandoutNobel
Advantages of HfAlON gate dielectric film for advanced low power CMOS application
2005
Structure and growth of self-assembling monolayers
2000 Standout
Fermi level pinning and Hf–Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces
2004
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2000 Standout
Self-Assembled Mono- and Multilayers of Terminally Functionalized Organosilyl Compounds on Silicon Substrates
1996
A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors
2002
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
SOFT LITHOGRAPHY
1998 Standout
Scaling the gate dielectric: Materials, integration, and reliability
1999
Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices
2005
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Low dielectric constant materials for microelectronics
2003 Standout
Selbstorganisation in natürlichen und in nichtnatürlichen Systemen
1996 StandoutNobel
Self‐Assembly in Natural and Unnatural Systems
1996 StandoutNobel
Impact of oxygen on the work functions of Mo in vacuum and on ZrO2
2005
Potential imaging of Si∕HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
2005
Time-dependent diffusivity of boron in silicon oxide and oxynitride
1999
Growth and characterization of ultrathin nitrided silicon oxide films
1999
Electrochemically Controllable Conjugation of Proteins on Surfaces
2007 StandoutNobel
Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides
2004 StandoutNobel
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
Self‐assembled monolayers of alkyltrichiorosilanes: Building blocks for future organic materials
1990
Self‐assembling synthetic supramolecular polymers
1992 StandoutNobel

Works of P.J. Tobin being referenced

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
2004
The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
1990
Measurement of N in nitrided oxides using spectroscopic immersion ellipsometry
1996
Metal gates for advanced CMOS technology
1999
Thermal Characteristics of the  H 2 SO 4 ‐  H 2 O 2 Silicon Wafer Cleaning Solution
1979
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
2004
Rankless by CCL
2026