Citation Impact

Citing Papers

The 1200V direct-driven SiC JFET power switch
2011
Current Sensing Techniques: A Review
2009 Standout
White light-emitting diode based on fluorescent SiC
2012 StandoutNobel
Recent Advances and Industrial Applications of Multilevel Converters
2010 Standout
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
1996 Standout
A review of Ga2O3 materials, processing, and devices
2018 Standout
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
Commercial impact of silicon carbide
2008
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
2002
High-Performance Planar Isolated Current Sensor for Power Electronics Applications
2007
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Design of junction termination structures for GaN Schottky power rectifiers
2003
Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
2009
A High-Temperature SiC Three-Phase AC–DC Converter Design for >$100 ^{\circ}$C Ambient Temperature
2012
Power Conversion With SiC Devices at Extremely High Ambient Temperatures
2007
Wide-bandgap semiconductor materials: For their full bloom
2015
A Steady-State Analysis Method for a Modular Multilevel Converter
2012 Standout
SiC Schottky Diodes for Harsh Environment Space Applications
2010
High-Power Modular Multilevel Converters With SiC JFETs
2011
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout

Works of Peter Friedrichs being referenced

Dielectric strength of thermal oxides on 6H-SiC and 4H-SiC
1994
Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
1999
Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET
2007
Application-Oriented Unipolar Switching SiC Devices
2002
Unipolar SiC Devices ¿ Latest Achievements on the Way to a New Generation of High Voltage Power Semiconductors
2006
Unipolar SiC power devices and elevated temperature
2005
Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
1997
Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
2000
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
1998
A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter
2005
Rankless by CCL
2026