Citation Impact
Citing Papers
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Detection of individual gas molecules adsorbed on graphene
2007 StandoutNobel
Recent developments in compact ultrafast lasers
2003 StandoutNature
SQUID-Based Microwave Cavity Search for Dark-Matter Axions
2010 StandoutNobel
Search for Hidden Sector Photons with the ADMX Detector
2010 StandoutNobel
Density of States and Zero Landau Level Probed through Capacitance of Graphene
2010 StandoutNobel
Elastic Scattering Time of Matter Waves in Disordered Potentials
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Optical-field-induced current in dielectrics
2012 StandoutNatureNobel
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Two-dimensional materials and their prospects in transistor electronics
2015
Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration
1981 StandoutNobel
Higher-Order States in the Multiple-Series, Fractional, Quantum Hall Effect
1984 StandoutNobel
Experimental evidence for finite-width edge channels in integer and fractional quantum Hall effects
1993 StandoutNobel
Gate-controlled transport in narrow GaAs/Al x Ga 1 − x
1986 StandoutNobel
New Approaches to Nanofabrication: Molding, Printing, and Other Techniques
2005 Standout
Breakdown of universal scaling of conductance fluctuations in high magnetic fields
1992 StandoutNobel
Optoelectronic transient characterization of ultrafast devices
1992 StandoutNobel
Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
1983 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Fractional Quantization of the Hall Effect
1983 StandoutNobel
Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors
1981 StandoutNobel
Activation energies and localization in the fractional quantum Hall effect
1987 StandoutNobel
Heat-capacity study of two-dimensional electrons in GaAs/Al x Ga 1 − x
1992 StandoutNobel
Microwave cavity searches for dark-matter axions
2003 StandoutNobel
Transport properties of GaAs IGFETs
1982 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Resonant tunneling in magnetic field: Evidence for space-charge buildup
1987 StandoutNobel
GaAs field-effect transistor with an atomically precise ultrashort gate
1991 StandoutNobel
Heterostructure bipolar transistors and integrated circuits
1982 StandoutNobel
Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs
1989 StandoutNobel
Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells
1995 StandoutNobel
Interface connection rules for effective-mass wave functions at an abrupt heterojunction between two different semiconductors
1983 StandoutNobel
Cyclotron resonance of high-mobility two-dimensional electrons at extremely low densities
1988 StandoutNobel
High-transition-temperature superconducting quantum interference devices
1999 StandoutNobel
Semiconductor crystallites: a class of large molecules
1990 StandoutNobel
Unconventional Methods for Fabricating and Patterning Nanostructures
1999 Standout
Scaling in spin-degenerate Landau levels in the integer quantum Hall effect
1993 StandoutNobel
InAs-AlSb quantum wells in tilted magnetic fields
2000 StandoutNobel
Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier
1997
Microscopical Structuring of Solids by Molecular Beam Epitaxy—Spatially Resolved Materials Synthesis
1988
RF transistors: Recent developments and roadmap toward terahertz applications
2007
SQUID magnetometers for low-frequency applications
1989
Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interface
1981 StandoutNobel
Picosecond optical sampling of GaAs integrated circuits
1988
Evidence for the Fractional Quantum Hall State atν = 1 7
1988 StandoutNobel
Modulation-doped field-effect transistor based on a two-dimensional hole gas
1984 StandoutNobel
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Transport anomalies in the lowest Landau level of two-dimensional electrons at half-filling
1989 StandoutNobel
Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron Systems
1985 StandoutNobel
Temperature dependence of the quantized Hall effect
1985 StandoutNobel
Picosecond pulse propagation on coplanar striplines fabricated on lossy semiconductor substrates: modeling and experiments
1993 StandoutNobel
Absorption of ballistic phonons by the (001) inversion layer of Si: Electron-phonon interaction in two dimensions
1983 StandoutNobel
Fractional quantum Hall effect at low temperatures
1983 StandoutNobel
Temperature dependence of electron mobility inG a A s − Al x Ga 1 − x As
1984 StandoutNobel
The present status of modulation-doped and insulated-gate field-effect transistors in III–V semiconductors
1982
Radiation effects on modulation-doped GaAs-AlxGa1−xAs heterostructures
1983 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation
1990 StandoutNobel
Microlithography: An overview
1994
Works of P.C. Chao being referenced
94 GHz transistor amplification using an HEMT
1986
A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz
1989
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
1990
Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique
1985
W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/
1995
DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
1989
Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs
1981
Ultra-low-noise cryogenic high-electron-mobility transistors
1988
0.1-µm Gate-length pseudomorphic HEMT's
1987
Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
1991
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
1986