Citation Impact
Citing Papers
Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
2003 Standout
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
2012 Standout
Field effect transistors with SrTiO3 gate dielectric on Si
2000
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2001
High dielectric constant oxides
2004 Standout
Raman scattering inHf x Zr 1 − x O 2
2005 StandoutNobel
Solid-Solution Nanoparticles: Use of a Nonhydrolytic Sol−Gel Synthesis To Prepare HfO2 and HfxZr1-xO2 Nanocrystals
2004 StandoutNobel
Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
2002
Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics
2004
Point defects in ZrO/sub 2/ high-/spl kappa/ gate oxide
2005
Ferroelectricity in hafnium oxide thin films
2011 Standout
Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer
2006
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
2000
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Band offsets of wide-band-gap oxides and implications for future electronic devices
2000 Standout
Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks
2005
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy
2000
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
2002
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Low dielectric constant materials for microelectronics
2003 Standout
Pseudopotential study of PrO2 and HfO2 in fluorite phase
2001
Epitaxial oxides on silicon grown by molecular beam epitaxy
2001
Epitaxial oxide thin films on Si(001)
2000
Mechanism of dopant segregation toSiO 2 / Si ( 001 )
2002
Metal–Oxide RRAM
2012 Standout
Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films
2004
Mechanism of dopant segregation to SiO2/Si(001) interfaces
2000
Radiation Effects in MOS Oxides
2008 Standout
Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides
2004 StandoutNobel
Perovskite lead-free dielectrics for energy storage applications
2018 Standout
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
Dopant local bonding and electrical activity near Si(001)-oxide interfaces
2005 StandoutNobel
Properties of Ta–Mo alloy gate electrode for n-MOSFET
2005
Characteristics of ZrO2 gate dielectric deposited using Zr t–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
2002
Magnetic resonance studies of trapping centers in high-/spl kappa/ dielectric films on silicon
2005
Works of P. Zeitzoff being referenced
Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance
2004
High-k gate stacks for planar, scaled CMOS integrated circuits
2003
Dielectrics for future transistors
2004
Interfacial Layer-Induced Mobility Degradation in High-kTransistors
2004
Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices
1996
Correcting effective mobility measurements for the presence of significant gate leakage current
2003
The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs
1999