P. Rossel

Velocity of surface carriers in inversion layers on silicon

Optical detector to monitor plasma etching

Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density

A simple two-dimensional model for IGFET operation in the saturation region

Investigation of the reproducibility of electronic properties in n‐type inverted silicon MOSFET surfaces

Fundamentals of Modern VLSI Devices

Electronic properties of two-dimensional systems

Mobility parameters and metal-oxidesemiconductor-transistor properties

Instabilites temporelles des transistors MOS—II

Accurate two sections model for MOS transistor in saturation