Standout Papers

Interface states and electron spin resonance centers in thermally oxidized (111) and (100) si... 1981 2026 1996 2011 429
  1. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers (1981)
    Edward H. Poindexter, P. J. Caplan et al. Journal of Applied Physics

Immediate Impact

7 by Nobel laureates 25 from Science/Nature 70 standout
Sub-graph 1 of 22

Citing Papers

The future transistors
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A framework for scintillation in nanophotonics
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3 intermediate papers

Works of P. J. Caplan being referenced

Electronic traps and P b centers at the Si/SiO2 interface: Band-gap energy distribution
1984
Characterization of Si/SiO2 interface defects by electron spin resonance
1983

Author Peers

Author Last Decade Papers Cites
P. J. Caplan 1917 975 107 751 54 2.3k
H. H. Woodbury 1517 827 76 1264 48 2.1k
Kunie Ishioka 1021 1020 41 979 100 2.0k
K. W. Wecht 1944 536 137 1950 56 2.7k
D. Kaplan 1229 630 80 911 50 1.8k
H. Ennen 1551 1156 38 1310 30 2.1k
R. K. Jain 1565 642 103 1411 84 2.4k
R. L. Aggarwal 1362 567 122 1357 64 2.1k
Vladimir S. Ban 993 438 93 600 61 1.5k
K. L. Brower 1907 1037 20 850 40 2.2k
R. S. Title 1341 1179 47 788 43 2.1k

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