P. D. Ye

Electronics based on two-dimensional materials

Highly active oxide photocathode for photoelectrochemical water reduction

Nanometre-scale electronics with III–V compound semiconductors

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Platinum single-atom and cluster catalysis of the hydrogen evolution reaction

The ReaxFF reactive force-field: development, applications and future directions

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells

Atomic Layer Deposition: An Overview

Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{\bf 2}$O$_{\bf 3}$ n-FinFETs

Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization

Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer

Stabilizing Nanostructured Solid Oxide Fuel Cell Cathode with Atomic Layer Deposition

III–V compound semiconductor transistors—from planar to nanowire structures

High Performance Multilayer MoS₂ Transistors with Scandium Contacts

Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric