P. Bove

A review of Ga2O3 materials, processing, and devices

Magnetization instabilities at tilted magnetic fields in the quantum Hall regime

X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs

Band parameters for III–V compound semiconductors and their alloys

Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques

InAs-AlSb quantum wells in tilted magnetic fields

Landau and spin levels in InAs quantum wells resolved with in-plane and parallel magnetic fields

GaN-based p-type metal-oxide–semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method

Suppression of the Landau-level coincidence: A phase transition in tilted magnetic fields

Advances in MOVPE, MBE, and CBE

Band offsets ofGa0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions

P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures

Metal Organic Molecular Beam Epitaxy Growth of Ga_0.5In_0.5P/GaAs Quantum Well Structures

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties

A study into the impact of sapphire substrate orientation on the properties of nominally-undoped β-Ga₂O₃ thin films grown by pulsed laser deposition