Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Mini-LED, Micro-LED and OLED displays: present status and future perspectives
2020 Standout
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
2012 Standout
Liquid crystal display and organic light-emitting diode display: present status and future perspectives
2017 Standout
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2009
Integrated microwave photonics
2019 Standout
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
High-power, wide-temperature range operation of 1.3-μm gain-coupled DFB lasers with automatically buried InAsP absorptive grating
1996
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Optical intensity modulators for digital and analog applications
2003
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Dynamic properties of partly gain-coupled 1.55-μm DFB lasers
1995
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Recent Advances on Quantum-Dot-Enhanced Liquid-Crystal Displays
2017
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
High performance SWIR HgCdTe detector arrays
1997
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
Infrared detectors: status and trends
2003 Standout
Mass Transport, Faceting and Behavior of Dislocations in GaN
2000 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
4‐3: Wide Viewing Angle TN LCD Enhanced by Printed Quantum‐Dots Film
2016
Band parameters for nitrogen-containing semiconductors
2003 Standout
Works of N. Puetz being referenced
Mach-Zehnder modulator integrated with a gain-coupled DFB laser for 10 Gbit/s, 100 km NDSF transmission at 1.55 μm
1996
Mach–Zehnder modulator integrated with a gain-coupledDFB laser for 10 Gbit/s, 100 km NDSF transmission at 1.55 µm
1996
Partly gain-coupled 1.55 mu m strained-layer multiquantum-well DFB lasers
1993
1.55 μm index/gain coupled DFB lasers with strained layer multiquantum-well active graing
1992
12.5L: Late‐News Paper : Quantum Dots for High Color Gamut LCD Displays using an On‐Chip LED Solution
2014
Metalorganic chemical vapor deposition InGaAs p-i-n photodiodes with extremely low dark current
1988
Magneto-optical study of Ga0.47In0.53As–InP under hydrostatic pressure
1991
Capping and decapping of InP and InGaAs surfaces
1990