N. M. Shmidt

Contact bonding, including direct-bonding in a historical and recent context of materials science and technology, physics and chemistry

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

GaN Substrates for III-Nitride Devices

Transfer printing by kinetic control of adhesion to an elastomeric stamp

Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane

Direct Bonding of Silicon Wafers with Simultaneous Dopant Diffusion

Macro- and microstrains in MOCVD-grown GaN

P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE