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Relaxation in liquids, polymers and plastic crystals — strong/fragile patterns and problems
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The selective trapping of mobile group-V interstitials by impurities in electron-irradiated GaAs and GaP
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Identification of a defect in a semiconductor:EL2 in GaAs
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High-power passively mode-locked semiconductor lasers
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New EPR data for chromium in electron-irradiated p-type GaAs: the observation of Cr complexes
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Proton and deuteron implantations in GaAs, GaP and InP
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Large tunnel magnetoresistance in magnetic tunnel junctions using Co2MnX (X = Al, Si) Heusler alloys
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Band parameters for nitrogen-containing semiconductors
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Thermal boundary resistance
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Works of M.R. Brozel being referenced
Partial dissociation of nitrogen aggregates in diamond by high temperature-high pressure treatments
1978
A low-symmetry interstitial boron centre in irradiated gallium arsenide
1978
Near-band-edge absorption and positron trapping under illumination in semi-insulating GaAs: Role of As vacancies
1995
Silicon donor-acceptor pair defects in gallium arsenide
1979
Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAs
1983
Interstitial defects involving carbon in irradiated silicon
1975
Properties of gallium arsenide
1996
Electrical inhomogeneity in 1" diameter partially dislocation-free undoped LEC GaAs
1988
The incorporation of tin in indium phosphide
1984
Properties of aluminum gallium arsenide
1993
Photoluminescence of chromium doped and chromium diffused GaAs
1982
Carbon, oxygen and silicon impurities in gallium arsenide
1978
An automated internal friction apparatus for frequencies up to 200 Hz
1978
Electrical compensation in semi-insulating gallium arsenide
1978
An investigation of photo-quenching properties of LEC GaAs by using optical and electrical techniques
1991