Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Gallium adsorption onto (1120) gallium nitride surfaces
2004 StandoutNobel
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC
2001
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001 StandoutNobel
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
1999
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
The doping process and dopant characteristics of GaN
2002
Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films
2003 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Current limitation after pinch-off in AlGaN/GaN FETs
2000
A comprehensive review of ZnO materials and devices
2005 Standout
Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
2002
Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates
2003 StandoutNobel
Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire
2009
Proton implantation effects on electrical and recombination properties of undoped ZnO
2003
Gallium adsorption on (0001) GaN surfaces
2003
Substitutional and interstitial carbon in wurtzite GaN
2002
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
2006
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Chemical origin of the yellow luminescence in GaN
2002
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
2002
Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films
2003
Investigation of optical metastability in GaN using photoluminescence spectroscopy
2003
Surface sensitivity of impurity incorporation: Mg at GaN (0001) surfaces
1999
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Structural analysis of InxGa1−xN single quantum wells by coaxial-impact collision ion scattering spectroscopy
2000 StandoutNobel
Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
2002
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
<title>GaN deep-level capture barriers</title>
2001
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
2001
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
1998
Morphology and surface reconstructions of GaN(1100) surfaces
2003
Adsorption and incorporation of silicon at GaN(0001) surfaces
2002
Metastability of Oxygen Donors in AlGaN
1998
2000
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
2000
Fermi level pinning in heavily neutron-irradiated GaN
2006
Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth
2008
Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate
2000
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Properties of the CdSe(0001), (0001), and (1120) Single Crystal Surfaces: Relaxation, Reconstruction, and Adatom and Admolecule Adsorption
2005 StandoutNobel
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
2001
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations
2008
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
2001
DX-like behavior of oxygen in GaN
2001 StandoutNobel
Structure of GaN(0001): The laterally contracted Ga bilayer model
2000
GaN: Processing, defects, and devices
1999
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition
2003
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
2000
Electrical characteristics of Au and Ag Schottky contacts on n-ZnO
2003
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
2009
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films
1998
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
2003
InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport
2000 StandoutNobel
Energy band bowing parameter in AlxGa1−xN alloys
2002
Incorporation of beryllium on the clean and indium-terminated GaN(0001) surface
2001
Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy
2004
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Role of carbon in GaN
2002
Oxidation study of GaN using x-ray photoemission spectroscopy
1999
Group III nitride semiconductors for short wavelength light-emitting devices
1998
Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
1998 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
2007
Deep traps in high resistivity AlGaN films
1998
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Logic Gates and Computation from Assembled Nanowire Building Blocks
2001 StandoutScience
Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
1998
Observation of highly dispersive surface states on GaN(0001)1×1
1999 StandoutNobel
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
2002
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
The band-gap bowing of AlxGa1−xN alloys
1999
Works of M. Shin being referenced
The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire
1996
GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations
1999
On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy
1996
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE
1996
Ion implantation of Si, Mg and C into Al0.12Ga0.88N
1997
Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire
1996
Determination of wurtzite GaN lattice polarity based on surface reconstruction
1998
Properties of Si donors and persistent photoconductivity in AlGaN
1998
Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
1998
Growth of AlBN solid solutions by organometallic vapor-phase epitaxy
1997
Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction
1998
Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy
1998
High Resistivity AlxGa1−xN Layers Grown by MOCVD
1996
High Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE
1996