Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Eu3+-doped β-Ga2O3 nanophosphors: annealing effect, electronic structure and optical spectroscopy
2011
Optical gain in silicon nanocrystals
2000 StandoutNature
Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
2009 StandoutNobel
Applications of Ultrasound to the Synthesis of Nanostructured Materials
2010 Standout
Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
1999
On models of phosphorus diffusion in silicon
1983
Recent developments in rare-earth doped materials for optoelectronics
2002
Ohmic Contact of Cadmium Oxide, a Transparent Conducting Oxide, to n-type Indium Phosphide
2011
Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications
2015
Electrically Controlling and Monitoring InP Nanowire Growth from Solution
2009 StandoutNobel
Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN
1997
First-principles calculations for point defects in solids
2014 Standout
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Metal-insulator transitions
1998 Standout
Vertical bipolar transistors on buried silicon nitride layers
1984
Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources
1999
Green electroluminescence from Er-doped GaN Schottky barrier diodes
1998
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
Tin doped indium oxide thin films: Electrical properties
1998 Standout
Optical transitions in Pr-implanted GaN
1999
Point defects and dopant diffusion in silicon
1989 Standout
Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices
2012 Standout
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping
1996 StandoutNobel
Infrared properties ofYBa 2 Cu 3 O 7 Bi 2 Sr 2 Ca n − 1 Cu n O 2 n + 4
1994
Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN
1997
Sonochemical Preparation of GaSb Nanoparticles
2002
Operational experience with a valved antimony cracker source for use in molecular beam epitaxy
1998 StandoutNobel
Room-temperature electroluminescence from Er-doped crystalline Si
1994
Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
1998
Gallium antimonide device related properties
1993
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
1.54-μm photoluminescence from Er-implanted GaN and AlN
1994
X-Ray Photoelectron Spectroscopic Study of Oxidation of InP
1992
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Photoluminescence spectroscopy of erbium implanted gallium nitride
1997
Improved composition control of digitally grown AlAsSb lattice-matched to InP
1999 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
All‐Solid‐State Z‐Scheme Photocatalytic Systems
2014 Standout
Guiding, modulating, and emitting light on Silicon-challenges and opportunities
2005
Quantum Monte Carlo simulations of solids
2001 Standout
GaN: Processing, defects, and devices
1999
Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs
1988 StandoutNobel
On the use of dimeric antimony in molecular beam epitaxy
1995
Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN
1997 StandoutNobel
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Photoluminescence and electrical properties of erbium-doped indium oxide films prepared by rf sputtering
1994
Advances in crystalline silicon solar cell technology for industrial mass production
2010 Standout
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Model describing phosphorus diffusion gettering of transition elements in silicon
1990
Time-Reversed Lasing and Interferometric Control of Absorption
2011 StandoutScience
The physics and technology of gallium antimonide: An emerging optoelectronic material
1997
Zn gettering in InGaAs/InP interfaces
1986
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Graphene photodetectors for high-speed optical communications
2010 Standout
Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum
1993
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Structural properties of Eu doped gallium oxide films
2017
Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials
1987
1994
Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films
2015
High Tolerance to Iron Contamination in Lead Halide Perovskite Solar Cells
2017 StandoutNobel
Dopant local bonding and electrical activity near Si(001)-oxide interfaces
2005 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of M. Salvi being referenced
Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities
1990
Study of buried silicon nitride layers synthesized by ion implantation
1980
Selected area growth of InP by low pressure metalorganic chemical vapor deposition on ion implanted InP substrates
1983
Schottky and field-effect transistor fabrication on InP and GaInAs
1988
Anomalous behavior of ion-implanted GaSb
1991
Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations
1981
Depth profiles of Fe and Cr implants in InP after annealing
1982
Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
1989
Selenium residual doping of (AlGa)Sb/GaSb epilayers grown by molecular beam epitaxy
1992
Crystalline characterization by Rutherford backscattering spectrometry and electron channelling of in situ grown YBa2Cu3O7 thin films deposited on (1 0 0) MgO by d.c. sputtering or laser ablation
1993
Photoluminescence studies of Mg and Hg implanted Ga0.47In0.53As
1987