Standout Papers

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 2026 2006 2016 466
  1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (1997)
    P.A. Stolk, H.‐J. Gossmann et al. Journal of Applied Physics

Immediate Impact

2 by Nobel laureates 5 from Science/Nature 49 standout
Sub-graph 1 of 24

Citing Papers

Synaptic and neural behaviours in a standard silicon transistor
2025 StandoutNature
Structural Regulation of Covalent Organic Frameworks for Catalysis
2024 Standout
2 intermediate papers

Works of M. Jaraı́z being referenced

Sulfur Hydrogen Bonding in Isolated Monohydrates: Furfuryl Mercaptan versus Furfuryl Alcohol
2018
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
1997 Standout

Author Peers

Author Last Decade Papers Cites
M. Jaraı́z 1913 1000 695 90 2.3k
J. R. Engstrom 1566 747 223 96 2.4k
Kunie Ishioka 1021 979 241 100 2.0k
Randall L. Headrick 2284 1182 1049 98 3.5k
P. Balk 3038 2005 205 178 3.7k
M. Suzuki 828 1360 214 117 3.3k
C. E. C. Wood 2464 2439 128 120 3.4k
P. O. Nilsson 617 1577 211 149 2.5k
A. Koma 946 743 97 69 1.8k
Vikram Kumar 1600 880 77 110 2.0k
Richard Haight 2423 1255 182 97 3.5k

All Works

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