Citation Impact
Citing Papers
Residual stress. Part 1 – Measurement techniques
2001 Standout
Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates
2004 StandoutNobel
Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
2004
Direct atomic structure determination of epitaxially grown films:Gd 2 O 3
2002
Spin glasses: Experimental facts, theoretical concepts, and open questions
1986 Standout
The electrical properties of polycrystalline silicon films
1975 Standout
Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors
1974 StandoutNobel
Toward the rational design of non-precious transition metal oxides for oxygen electrocatalysis
2015 Standout
Quantum Confinement in Size-Selected, Surface-Oxidized Silicon Nanocrystals
1993 StandoutScienceNobel
Raman scattering study of InAs/GaInSb strained layer superlattices
1991 StandoutNobel
The anodic oxidation of superimposed metallic layers: theory
1980
Characterisation of oxide films produced by plasma electrolytic oxidation of a Ti–6Al–4V alloy
2000 Standout
Solar Water Splitting Cells
2010 Standout
Total ionizing dose effects in MOS oxides and devices
2003 Standout
Electronic states at the silicon-silicon dioxide interface
1977
Dimensions of luminescent oxidized and porous silicon structures
1994 StandoutNobel
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
1967 Standout
Hexagonal ferrites: A review of the synthesis, properties and applications of hexaferrite ceramics
2012 Standout
Properties of (Nb1 − xTax)2O5 solid solutions and (Nb1 − xTax)2O5-ZrO2 nanolaminates grown by Atomic Layer Epitaxy
1997
Ellipsometric Technique for Obtaining Substrate Optical Constants
1970
MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS
1965
New Model for Interface Charge-Carrier Mobility: The Role of Misfit Dislocations
1968
Effects of ionizing radiation on oxidized silicon surfaces and planar devices
1967
The history of the Point Defect Model for the passive state: A brief review of film growth aspects
2010 Standout
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
1998 StandoutNobel
Frequency Response of the Strong Inversion Layer in a Silicon Wafer
1983
Experimental Verification of the Charge Coupled Device Concept
1970 StandoutNobel
Shubnikov-De Haas Oscillations Caused by a Two-Dimensional Leakage Channel on Silicon Mosfets Induced by Electron Irradiation
1978
Preparation and morphology of niobium oxide fibres by electrospinning
2003
Oxidfilme auf AIIIBV-halbleitern
1978
TiO2 nanotubes: Self-organized electrochemical formation, properties and applications
2007 Standout
Hall effect measurements of hole mobility in an inversion layer at the SiSiO2 interface
1971
Bulk nanostructured thermoelectric materials: current research and future prospects
2009 Standout
FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES
1966
Ellipsometric liquid immersion method for the determination of all the optical parameters of the system: Nonabsorbing film on an absorbing substrate
1969
Numerical studies on the electro-optic detection of femtosecond electron bunches
2008 StandoutNobel
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
A survey of the heteroepitaxial growth of semiconductor films on insulating substrates
1974
Hole traps and trivalent silicon centers in metal/oxide/silicon devices
1984
High-field transport in SiO2 on silicon induced by corona charging of the unmetallized surface
1976
Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds
1977
Niobium Oxide Thin Films Grown by Atomic Layer Epitaxy
1998
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Humidity Sensors: A Review of Materials and Mechanisms
2005 Standout
Surface-state spectra from thick-oxide MOS tunnel junctions
1974
Status of the GaAs metal—oxide—semiconductor technology
1980
Peaked structure in field-effect mobility of silicon MOS transistors at very low temperatures
1973
Electron-hole excitations and optical spectra from first principles
2000 Standout
Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eV
1977
Anodic oxidation of titanium and TA6V alloy in chromic media. An electrochemical approach
1999 Standout
Optical anisotropy in InAs/AlSb superlattices
1994 StandoutNobel
Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si
1995 StandoutNobel
Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF4/O2 plasma
1995
Effects of the reaction parameters on the deposition characteristics in ZrO2 CVD
1992
Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
1971 Standout
Minority carrier lifetime determination from inversion layer transient response
1967
Self-energy operators and exchange-correlation potentials in semiconductors
1988 Standout
Molecular beam epitaxy
1975 Standout
Electrospinning of Nanofibers: Reinventing the Wheel?
2004 Standout
Methanol oxidation and hydrogen reactions on NiZr in acid solution
1993 StandoutNobel
Dielectric behaviors of Nb2O5(0.95):0.05TiO2 ceramic and single crystal
2002
Anodic Oxide Films
1962
Substrate dependence on the optical properties of Al2O3 films grown by atomic layer deposition
1997
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
Surface states at steam-grown silicon-silicon dioxide interfaces
1966
Plasma oxidation of GaAs
1976
Studies of thermally-oxidized GaAs by transmission electron microscopy
1978
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films
1998 StandoutNobel
Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials
2016 StandoutNobel
Third-Harmonic Generation in Absorbing Media of Cubic or Isotropic Symmetry
1971 StandoutNobel
The effects of oxide traps on the MOS capacitance
1965
Radiation Effects in MOS Oxides
2008 Standout
Preparation and electrical properties of AlAlNSi structures
1972
Ellipsometric Method for the Determination of All the Optical Parameters of the System of an Isotropic Nonabsorbing Film on an Isotropic Absorbing Substrate Optical Constants of Silicon*
1969
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
The Electrochemical Behavior of Alkali and Alkaline Earth Metals in Nonaqueous Battery Systems—The Solid Electrolyte Interphase Model
1979 Standout
Determination of effective capacitance and film thickness from constant-phase-element parameters
2009 Standout
Theory of the electronic structure of the Si-SiO 2
1980 StandoutNobel
Charge Coupled Semiconductor Devices
1970 StandoutNobel
Laser Oxidation of GaAs
1981 StandoutNobel
Radiation effects on modulation-doped GaAs-AlxGa1−xAs heterostructures
1983 StandoutNobel
Phase formation in ceramic coatings during plasma electrolytic oxidation of aluminium alloys
1998 Standout
Measurements of the Scattering of Conduction Electrons by Localized Surface Charges
1968
Hall Mobility in Chemically Deposited Polycrystalline Silicon
1971
Electronic properties of two-dimensional systems
1982 Standout
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout
Works of K.H. Zaininger being referenced
ELECTRON BOMBARDMENT OF MOS CAPACITORS
1966
Radiation resistance of Al2O3MOS devices
1969
An Amorphous Modification of Gallium‐Arsenic (V) Oxide
1963
Frequency response of the surface inversion layer in silicon
1964
Irradiation of MIS Capacitors with High Energy Electrons
1966
The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2system
1966
Ellipsometric investigations of oxide films on Ga As
1964
Preparation, Optical and Dielectric Properties of Vapor-Deposited Niobium Oxide Thin Films
1969
Determination of conductivity type from MOS-capacitance measurements
1964
Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal Spinel
1969
Interface states and interface disorder in the Si-SiO2 system
1967
Improved Insulators for IC Technology.
1969
Thin film dielectric materials for microelectronics
1969
Limitations of the MOS capacitance method for the determination of semiconductor surface properties
1965