Karl Hofmann

Synaptic and neural behaviours in a standard silicon transistor

Molecular cation and low-dimensional perovskite surface passivation in perovskite solar cells

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

A Simple Model Describing the Symmetric <formula formulatype="inline"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> Characteristics of <formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Polycrystalline Si/ <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}$</tex></formula> Monocrystalline Si, and <formula formulatype="inline"> <tex Notation="TeX">$\hbox{n}$</tex></formula> Polycrystalline Si/<formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Monocrystalline Si Junctions