Standout Papers
Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Photocatalysts with internal electric fields
2013
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001 StandoutNobel
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation
2004
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Trapping effects in GaN and SiC microwave FETs
2002
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
1999
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2001
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
1999
Nitrogen-polar GaN growth evolution on c-plane sapphire
2008
GaN-Based RF Power Devices and Amplifiers
2008 Standout
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
1998 StandoutNobel
Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire
2002
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
2000
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
III-V nitrides—important future electronic materials
1999
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
AlGaN/AlN/GaN high-power microwave HEMT
2001
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
2002
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
2003 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
2002 StandoutNobel
Accurate calculation of polarization-related quantities in semiconductors
2001
Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications
2011 StandoutNobel
Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
2001
Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication
2004
The growth of N-face GaN by MOCVD: effect of Mg, Si, and In
2004 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
High optical quality AlInGaN by metalorganic chemical vapor deposition
1999
Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
2005
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
High conductivity modulation doped AlGaN/GaN multiple channel heterostructures
2003
Ultrahigh Thermoelectric Performance in SrNb0.2Ti0.8O3 Oxide Films at a Submicrometer-Scale Thickness
2017
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment
2000
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
2002
Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
2003
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2001 Standout
Optimization of AlGaN∕GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching
2004
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
AlGaN/GaN $Ka$-Band 5-W MMIC Amplifier
2006
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design
2002
Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy
2010
Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling
2002
Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
2003
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
2002
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
GaN: Processing, defects, and devices
1999
Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices
1999
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
2003
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
2009
Group III-nitride based hetero and quantum structures
2000
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
2000
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
2008 StandoutNobel
Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
1999
Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
1999
Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy
2010
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
2001
Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures
2000
Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs
2002
Thermoelectric effects in wurtzite GaN and AlxGa1−xN alloys
2005
Heterojunction Photocatalysts
2017 Standout
Review of polarity determination and control of GaN
2004
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
2006
Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
2007
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer
2001
Thermal conduction in AlxGa1−xN alloys and thin films
2005
Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN
2002
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
2002
Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures
2001
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
1999
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
2002
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
2000
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
2000
Mg Zn O ∕ Al Ga N heterostructure light-emitting diodes
2004
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
2005 StandoutNobel
The polarization-induced electron gas in a heterostructure
2000
Playing with Polarity
2001
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999
Investigation of violet InGaN laser diodes with normal and reversed polarizations
2007
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of K. Chu being referenced
Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices
1999
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
1999
9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates
2004
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures
1999
0.12-μm gate III-V nitride HFET's with high contact resistances
1997
High Frequency AlGaN/GaN MODFET's
1997
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
1999
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2000
High efficiency monolithic gallium nitride distributed amplifier
2000