K. Ando

An array processor for general purpose digital image compression

Silicon nitride chemical vapor deposition from dichlorosilane and ammonia: theoretical study of surface structures and reaction mechanism

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

High dielectric constant oxides

VLSI architectures for video compression-a survey

Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects

Surface photovoltage phenomena: theory, experiment, and applications

Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

Adaptive and Maladaptive Cardiorespiratory Responses to Continuous and Intermittent Hypoxia Mediated by Hypoxia-Inducible Factors 1 and 2

Chemical structure of the ultrathinSiO2/Si(100)interface: An angle-resolved Si2pphotoemission study

A single chip video signal processing architecture for image processing, coding, and computer vision

Electronic structure and spectral properties of paramagnetic point defects inSi3N4

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

High dielectric constant gate oxides for metal oxide Si transistors

Low dielectric constant materials for microelectronics

Reaction–diffusion in high-k dielectrics on Si

Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient

Modeled tunnel currents for high dielectric constant dielectrics

The restaurant at the end of the random walk: recent developments in the description of anomalous transport by fractional dynamics

Solid-state synthesis, structure, second-harmonic generation, and luminescent properties of noncentrosymmetric BaSi7N10:Eu2+ phosphors

Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides

Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water

High-κ gate dielectrics: Current status and materials properties considerations

Dopant local bonding and electrical activity near Si(001)-oxide interfaces

Mechanism of leakage current through the nanoscale SiO2 layer

Bonding configurations of nitrogen absorption peak at 960 cm−1 in silicon oxynitride films

250-MHz BiCMOS super-high-speed video signal processor (S-VSP) ULSI

Infrared studies of transition layers at SiO2/Si interface

Influence of H2-annealing on the hydrogen distribution near SiO2/Si(100) interfaces revealed by in situ nuclear reaction analysis