Citation Impact

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Hopping Conductivity in the Quantum Hall Effect: Revival of Universal Scaling
2002
High Frequency Conductivity in the Quantum Hall Regime
2001
Disorder-Driven Collapse of the Mobility Gap and Transition to an Insulator in the Fractional Quantum Hall Effect
2003 StandoutNobel
Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
2009 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Towards a quantum resistance standard based on epitaxial graphene
2010
A roadmap for graphene
2012 StandoutNatureNobel
Electronic transport and the localization length in the quantum Hall effect
1998
Magnetic-field-driven destruction of quantum Hall states in a double quantum well
1990
Localization and scaling in the quantum Hall regime
1986 StandoutNobel
Higher-Order States in the Multiple-Series, Fractional, Quantum Hall Effect
1984 StandoutNobel
Variable range hopping as the mechanism of the conductivity peak broadening in the quantum Hall regime
1993
Calculation of InAs/AlSb(001) band offsets: Effect of strain and interfacial atomic structure
1993
Observation of a ν=1/2 fractional quantum Hall state in a double-layer electron system
1992 StandoutNobel
How real are composite fermions?
1993 StandoutNobel
Synthesis and microstructure of gallium phosphide nanowires
2001
New Universality at the Magnetic Field Driven Insulator to Integer Quantum Hall Effect Transitions
1997 StandoutNobel
Variable range hopping transport in the tails of the conductivity peaks between quantum Hall plateaus
1995 Nobel
Linear and nonlinear electrical conduction in quasi-two-dimensional quantum wells
1987
Scaling of the quantum Hall plateau-plateau transition in graphene
2009 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Fractional Quantization of the Hall Effect
1983 StandoutNobel
Resistance fluctuations in the integral- and fractional-quantum-Hall-effect regimes
1991 StandoutNobel
Activation energies and localization in the fractional quantum Hall effect
1987 StandoutNobel
Heat-capacity study of two-dimensional electrons in GaAs/AlxGa1xAs multiple-quantum-well structures in high magnetic fields: Spin-split Landau levels
1992 StandoutNobel
High-magnetic-field transport in a dilute two-dimensional electron gas
1983 Nobel
X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
1998
Experimental evidence for a two-dimensional quantized Hall insulator
1998 StandoutNatureNobel
Composition dependence of band gap and type of lineup in In1−xyGaxAlyAs/InP heterostructures
1993
Resistance fluctuations in the quantum Hall regime
1994 StandoutNobel
Evidence for a phase transition in the fractional quantum Hall effect
1989 StandoutNobel
Current scaling in the integer quantum Hall effect
1994 StandoutNobel
Band offsets and transitivity ofIn1xGaxAs/In1yAlyAs/InP heterostructures
1993
Kondo effect in a single-electron transistor
1998 StandoutNature
Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1xAs heterostructures
1988 Nobel
Reflection of ballistic electrons from diffusive regions
1994 StandoutNobel
Experiments on Delocalization and University in the Integral Quantum Hall Effect
1988 StandoutNobel
Organo Lanthanide Metal Complexes for Electroluminescent Materials
2002 Standout
Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
1993
Quantization of the Hall effect in an anisotropic three-dimensional electronic system
1986 StandoutNobel
Universal Conductivity at the Quantum Hall Liquid to Insulator Transition
1995 StandoutNobel
The quantum Hall effect as an electrical resistance standard
2001
Competition between neighboring minima in the fractional quantum Hall effect
1985 StandoutNobel
Fractional Quantum Hall Effect aroundν=32: Composite Fermions with a Spin
1995 StandoutNobel
Theory of hot-electron magnetophonon resonance in quasi-two-dimensional quantum-well structures
1992 StandoutNobel
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Scaling in spin-degenerate Landau levels in the integer quantum Hall effect
1993 StandoutNobel
Termination of the series of fractional quantum hall states at small filling factors
1988 StandoutNobel
Transport in polyaniline networks near the percolation threshold
1994 StandoutNobel
Magnetotransport studies of the insulating phase around ν=1/5 Landau-level filling
1991 StandoutNobel
Fractal dimensionality of wave functions at the mobility edge: Quantum fractal in the Landau levels
1986
Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1−xAs heterostructure devices
1988
Optical pumping and the valence-band light-hole effective mass in GaxIn1−xAsyP1−y (y≃2.2x)
1981
Conductivity-peak broadening in the quantum Hall regime
1993
Growth and characterization of InGaAsP lattice-matched to InP
1981
Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As single quantum well structures
1994
New International Electrical Reference Standards Based on the Josephson and Quantum Hall Effects
1989
Advances in MOVPE, MBE, and CBE
1992
Neodymium-doped GaAs light-emitting diodes
1995
Evidence for the Fractional Quantum Hall State atν=17
1988 StandoutNobel
Magnetic-field-induced insulator-quantum Hall-insulator transition in a disordered two-dimensional electron gas
1994
Band offsets ofGa0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
1993
Theory of magnetoconductivity in a two-dimensional electron-gas system: Self-consistent screening model
1987
Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
1984 StandoutNobel
Charge transfer at double-layer to single-layer transition in double-quantum-well systems
1995 StandoutNobel
Band discontinuities inInxGa1xAs-InP and InP-AlyIn1yAs heterostructures:Evidence of noncommutativity
1997
A Capacitance Standard Based on Counting Electrons
1999 StandoutScienceNobel
Temperature dependence of the quantized Hall effect
1985 StandoutNobel
Single-electron transfer in metallic nanostructures
1992 StandoutNatureNobel
Evidence for a spin transition in the ν=2/3 fractional quantum Hall effect
1990 StandoutNobel
Novel physics in two dimensions with modulation-doped heterostructures
1984 StandoutNobel
The quantized Hall effect
1986 Nobel
Magnetic Field Dependence of Activation Energies in the Fractional Quantum Hall Effect
1985 StandoutNobel
Room-Temperature Quantum Hall Effect in Graphene
2007 StandoutScienceNobel
Photoluminescence of AlxGa1−xAs alloys
1994
Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy
1992
The 1986 adjustment of the fundamental physical constants
1987 Standout
Resistance fluctuations in narrow AlGaAs/GaAs heterostructures: Direct evidence of fractional charge in the fractional quantum hall effect
1989 StandoutNobel

Works of J.P. Hirtz being referenced

Ga x In 1− x As y P 1− y /InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.
1980
Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
1992
Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition
1983
Low-temperature investigations of the quantum Hall effect inInxGa1xAsInPheterojunctions
1983
The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy
1981
GaInAs/InP and GaInP/GaAs (100) interfaces: An ultraviolet photoelectron spectroscopy study
1992
The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctions
1982
Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties
1991
High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses
1993
1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy
1989
Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature
1984
Microwave photoresistivity of a two-dimensional electron gas and the fractional quantum Hall effect
1987
Growth of Ga 0.47 In 0.53 As on InP by low-pressure m.o. c.v.d.
1980
Quantum Hall effect inIn0.53Ga0.47As-InP heterojunctions with two populated electric subbands
1986
Precise Quantized Hall Resistance Measurements in GaAs/AlxGa1-xAs and InxGa1-xAs/InP Heterostructures
1986
Rankless by CCL
2026