Citation Impact

Citing Papers

Optical signature of Mg-doped GaN: Transfer processes
2012
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
The roles of photo-carrier doping and driving wavelength in high harmonic generation from a semiconductor
2017 StandoutNobel
Sustainability metrics for extending thin-film photovoltaics to terawatt levels
2012
Quantum dot nanoscale heterostructures for solar energy conversion
2012
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
2002 StandoutNobel
Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
1999
ZnO diode fabricated by excimer-laser doping
2000
Recent developments in rare-earth doped materials for optoelectronics
2002
Energy transfer in lanthanide upconversion studies for extended optical applications
2014 Standout
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
Photoluminescence and cathodoluminescence of GaN doped with Pr
2000
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry
2000 StandoutNobel
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
2001
Raman scattering studies on single-crystalline bulk AlN under high pressures
2001
Luminescence properties of defects in GaN
2005 Standout
Halide Perovskite Photovoltaics: Background, Status, and Future Prospects
2019 Standout
Mg-O andMgVNdefect complexes in cubic GaN
2000
Infrared, visible and upconversion emission of CaAl12O19 powders doped with Er3+, Yb3+ and Mg2+ ions
2011
Electrical properties of p-type GaN:Mg codoped with oxygen
2001
A comprehensive review of ZnO materials and devices
2005 Standout
Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write
1999
Green electroluminescence from Er-doped GaN Schottky barrier diodes
1998
Optical transitions in Pr-implanted GaN
1999
Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
2000
Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC
2002
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
2001 StandoutNobel
A New Sol–Gel Material Doped with an Erbium Complex and Its Potential Optical‐Amplification Application
2005
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
CO2 Hydrogenation to Formate and Methanol as an Alternative to Photo- and Electrochemical CO2 Reduction
2015 Standout
Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition
2000
Optical metastability in undoped GaN grown on Ga-rich GaN buffer layers
2002
Water electrolysis: from textbook knowledge to the latest scientific strategies and industrial developments
2022 Standout
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
2002
Emerging Two-Dimensional Nanomaterials for Electrocatalysis
2018 Standout
Temperature dependent exciton photoluminescence of bulk ZnO
2003
Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut
2015 Standout
Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
1998
Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films
2004
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Direct observation of an inhomogeneous chlorine distribution in CH3NH3PbI3−xClxlayers: surface depletion and interface enrichment
2015
Colloidal nanocrystal quantum dot assemblies as artificial solids
2012
Doping screening of polarization fields in nitride heterostructures
2000
Design of electrocatalysts for oxygen- and hydrogen-involving energy conversion reactions
2015 Standout
III–nitrides: Growth, characterization, and properties
2000
Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air
2003
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
2001
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Recent advances in transition metal phosphide nanomaterials: synthesis and applications in hydrogen evolution reaction
2016 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
2004 Standout
Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH 3 NH 3 PbI 3
2013 StandoutScience
GaN: Processing, defects, and devices
1999
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Energetic I–III–VI2and I2–II–IV–VI4nanocrystals: synthesis, photovoltaic and thermoelectric applications
2013
The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals
1999
Noble metal-free hydrogen evolution catalysts for water splitting
2015 Standout
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC
2001
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Phonon mode behavior in strained wurtziteAlNGaNsuperlattices
2005 StandoutNobel
Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy
2001
Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si
1999
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals
1999
Challenges for commercializing perovskite solar cells
2018 StandoutScience
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Optical properties of heavily dopedGaN/(Al,Ga)Nmultiple quantum wells grown on6HSiC(0001)by reactive molecular-beam epitaxy
2000
Perovskite photovoltaics: life-cycle assessment of energy and environmental impacts
2015
Efficient Visible Light Nitrogen Fixation with BiOBr Nanosheets of Oxygen Vacancies on the Exposed {001} Facets
2015 Standout
Earth-abundant inorganic electrocatalysts and their nanostructures for energy conversion applications
2014
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
1999 StandoutNobel
Efficient and stable solution-processed planar perovskite solar cells via contact passivation
2017 StandoutScience
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
2001
ZnO Nanostructures for Dye‐Sensitized Solar Cells
2009 Standout
Opportunities to improve the net energy performance of photoelectrochemical water-splitting technology
2016
Searching for “Defect-Tolerant” Photovoltaic Materials: Combined Theoretical and Experimental Screening
2017 StandoutNobel
Self-Assembly of Colloidal Nanocrystals: From Intricate Structures to Functional Materials
2016 Standout
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Toward practical solar hydrogen production – an artificial photosynthetic leaf-to-farm challenge
2019 Standout

Works of John T. Torvik being referenced

Electroluminescence from erbium and oxygen coimplanted GaN
1996
Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN
1997
Photovoltaic manufacturing: Present status, future prospects, and research needs
2011
GaN/SiC heterojunction bipolar transistors
2000
Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
1995
A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
1999
Annealing Study of Erbium and Oxygen Implanted Gallium Nitride
1996
Electrical characterization of GaN/SiC n-p heterojunction diodes
1998
Photoluminescence excitation measurements on erbium implanted GaN
1997
Interfacial effects during GaN growth on 6H-SiC
1999
Optical characterization of GaN/SiC n-p heterojunctions and p-SiC
1998
Molecular doping of gallium nitride
1999
Rankless by CCL
2026