Citation Impact
Citing Papers
New generation of infrared photodetectors
1998
Proton-induced damage in gallium nitride-based Schottky diodes
2005
A review of Ga2O3 materials, processing, and devices
2018 Standout
Photovoltaic performance of nanostructured zinc oxide sensitised with xanthene dyes
2008
Review—Ionizing Radiation Damage Effects on GaN Devices
2015
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Dye-Sensitized Solar Cells
2010 Standout
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
Stress Field Evolution in a Ball Bearing Raceway Fatigue Spall
2009
GaN-Based RF Power Devices and Amplifiers
2008 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm
2009 StandoutScienceNobel
Solution-processed hybrid perovskite photodetectors with high detectivity
2014 Standout
Single-photon detectors for optical quantum information applications
2009 Standout
Steels for bearings
2011 Standout
Optical gas sensing: a review
2012
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Third-generation infrared photodetector arrays
2009
Infrared detectors: status and trends
2003 Standout
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
2001
Graphene photodetectors for high-speed optical communications
2010 Standout
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Photoluminescence excitation spectroscopy of as-grown and chemically releasedIn 0.05 Ga 0.95
1991
Review of radiation damage in GaN-based materials and devices
2013
The deformation pattern of single crystal β-Ga 2 O 3 under nanoindentation
2017
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
2000
Radiation effects in GaN materials and devices
2012
Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
2003
Works of J.M. Dell being referenced
Laser beam induced current as a tool for HgCdTe photodiode characterisation
2000
<title>Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors</title>
1997
/sup 60/Co gamma irradiation effects on n-GaN Schottky diodes
2003
Unusually strong excitonic absorption in molecular-beam-epitaxy-grown, chemically lifted GaAs thin films
1990
MEMS-based microspectrometer technologies for NIR and MIR wavelengths
2009
Nanoscratch-induced phase transformation of monocrystalline Si
2010
Annealing of C60o gamma radiation-induced damage in n-GaN Schottky barrier diodes
2007
Strain effects in chemically lifted GaAs thin films
1990
Optical characterization of Fabry-Pe/spl acute/rot MEMS filters integrated on tunable short-wave IR detectors
2006
Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors
2000
F117-PW-100 Hybrid Ball Bearing Ceramic Technology Insertion
1996
Monolithic integration of an infrared photon detector with a MEMS-based tunable filter
2005
Micro-electromechanical systems-based microspectrometers covering wavelengths from 1500nm to 5000nm
2007
60Co gamma-irradiation-induced defects in n-GaN
2002