Citation Impact
Citing Papers
Synthesis and Crystal Structure of Phosphorus(V ) Nitride α‐P3N5
1997
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Thin films and devices of diamond, silicon carbide and gallium nitride
1993 StandoutNobel
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
1997 StandoutNobel
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
1994 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
1996 Standout
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
1996 StandoutNobel
Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy
1994 StandoutNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide
1992 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Progress and prospects of group-III nitride semiconductors
1996
Nanobeam Mechanics: Elasticity, Strength, and Toughness of Nanorods and Nanotubes
1997 StandoutScience
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Calculated elastic constants and deformation potentials of cubic SiC
1991
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Recent developments in SiC single-crystal electronics
1992
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
GaN grown on hydrogen plasma cleaned 6H-SiC substrates
1993
Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition
1993
Polarity of epitaxial layers and (1 21 0)prismatic defects in GaN and AIN grown on the (0001)Sisurface of 6H-SiC
1997
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Low resistivity (∼10−5 Ω cm2) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer
1994
Measurement of n-type dry thermally oxidized 6H-SiC metal-oxide-semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniques
1994
Pressure-induced phase transition in SiC
1993 StandoutNobel
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Performance limiting micropipe defects in silicon carbide wafers
1994
Optically pumped lasing of ZnO at room temperature
1997 Standout
Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates
1994
Prospects for device implementation of wide band gap semiconductors
1992
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC
1993 StandoutNobel
SiC boule growth by sublimation vapor transport
1991
Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates
1994
Enamine Catalysis Is a Powerful Strategy for the Catalytic Generation and Use of Carbanion Equivalents
2004 StandoutNobel
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Intrinsic exciton transitions in GaN
1998 StandoutNobel
Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
1997 StandoutNobel
Handbook of SiC properties for fuel performance modeling
2007 Standout
Nucleation and step motion in chemical vapor deposition of SiC on 6H-SiC{0001} faces
1994
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
The effects of board size and diversity on strategic change
1994
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Searching for Common Threads: Understanding the Multiple Effects of Diversity in Organizational Groups
1996 Standout
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
1998 StandoutNobel
Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
1995
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997 StandoutNobel
Electron-beam-induced optical memory effects in GaN
2002 StandoutNobel
Deep level defects in n-type GaN
1994 StandoutNobel
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Progress and prospects for GaN and the III–V nitride semiconductors
1993
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
Epitaxial growth of SiC thin films on Si-stabilized α-SiC(0001) at low temperatures by solid-source molecular beam epitaxy
1995
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
1997 StandoutNobel
Growth mechanism of 6H-SiC in step-controlled epitaxy
1993
Deposition and characterization of diamond, silicon carbide and gallium nitride thin films
1994 StandoutNobel
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy
1994 StandoutNobel
CVD growth and characterization of single-crystalline 6H silicon carbide
1993
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
1999 StandoutNobel
CoSi2 ohmic contacts to n-type 6HSiC
1995
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of J. Yang being referenced
Polytypic transformations in SiC: the role of TEM
1993
Growth of 2H-SiC on 6H-SiC by pulsed laser ablation
1994
Application of oxidation to the structural characterization of SiC epitaxial films
1991
Growth of improved quality 3C-SiC films on 6H-SiC substrates
1990
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers
1991
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
1990