J. Woitok

Bright light-emitting diodes based on organometal halide perovskite

Intrinsic and extrinsic performance limits of graphene devices on SiO2

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Spin photocurrents in quantum wells

Antimonide-based compound semiconductors for electronic devices: A review

Spintronics: Fundamentals and applications

Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition

Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power

Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

One-Dimensional Electrical Contact to a Two-Dimensional Material

MOVPE for InP-based optoelectronic device application

Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures

Infrared detectors: status and trends

Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates

Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth

Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

In situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth of low-temperature-GaN buffer layer

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

X-ray diffraction of III-nitrides

In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence

In situ and real-time characterization of metal-organic chemical vapor deposition growth by high resolution x-ray diffraction

Optical analysis of metalorganic vapor phase epitaxy grown ZnS/ZnSe/GaAs(100) heterostructures: Carrier diffusion and interface sharpness

m ‐plane GaN/InGaN/AlInN on LiAlO₂ grown by MOVPE

Quaternary nitride heterostructure field effect transistors

MOVPE growth and investigation of AlInN/AlN multiple quantum wells

In‐situ and real‐time monitoring of MOCVD growth of III‐nitrides by simultaneous multi‐wavelength‐ellipsometry and X‐ray‐diffraction

Molecular beam epitaxy and characterization of heterostructures for magnetic sensing applications