Citation Impact

Citing Papers

Mie Resonances, Infrared Emission, and the Band Gap of InN
2004 StandoutNobel
Electron–phonon coupling in hybrid lead halide perovskites
2016 Standout
Resonantly enhanced selective photochemical etching of GaN
2009
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Influence of electron-phonon interaction on the optical properties of III nitride semiconductors
2001
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2002
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
2003 StandoutNobel
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
2011 StandoutNobel
Indium nitride (InN): A review on growth, characterization, and properties
2003
A review of Ga2O3 materials, processing, and devices
2018 Standout
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Resonant Raman and FTIR spectra of carbon doped GaN
2014 StandoutNobel
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Etch rate and surface morphology control in photoelectrochemical etching of GaN
2004
Recent development of gallium oxide thin film on GaN
2013
Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
2013 StandoutNobel
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
Composition dependence of the optical phonon energies in hexagonal AlxGa1−xN
2001
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Wet etching of GaN, AlN, and SiC: a review
2005
Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes
2014 StandoutNobel
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications
2011 StandoutNobel
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
2002
Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells
2002 StandoutNobel
Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
2003 StandoutNobel
X-ray photoemission determination of the Schottky barrier height of metal contacts to n–GaN and p–GaN
2002
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
2012 StandoutNobel
Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
2011 StandoutNobel
Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors
2003
Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets
2013 StandoutNobel
Multijunction GaInN-based solar cells using a tunnel junction
2014 StandoutNobel
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
2014 StandoutNobel
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes
2003
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Free-to-bound radiative recombination in highly conducting InN epitaxial layers
2004 StandoutNobel
Improved performance of $(20\bar{2}1)$ long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers
2014 StandoutNobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates
2003
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method
2003
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures
2013 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
2012 StandoutNobel
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2007 StandoutNobel
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
2002 StandoutNobel
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys
2002
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
2013 StandoutNobel
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Donor and acceptor concentrations in degenerate InN
2002
Band Gap of Hexagonal InN and InGaN Alloys
2002

Works of J. Stemmer being referenced

Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces
1997
Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions
2000
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
2001
Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys
2000
Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres
2001
Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al0.25 Ga0.75 N Bragg Reflectors
2000
Electrical properties of photoanodically generated thin oxide films on n-GaN
2001
Smooth GaN surfaces by photoinduced electro-chemical etching
1999
Formation and Characterization of Oxides on GaN surfaces
2000
Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions
1999
Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)
2001
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2026