Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Optical signatures of dopants in GaN
2006 StandoutNobel
Maskless pendeo-epitaxial growth of GaN films
2002 StandoutNobel
Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells
2003
Internal efficiency analysis of 280-nm light emitting diodes
2004 StandoutNobel
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Electrical properties of p-type GaN:Mg codoped with oxygen
2001
A comprehensive review of ZnO materials and devices
2005 Standout
Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
2002
Pulsed laser annealing of Be-implanted GaN
2005
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
The anomalous bandgap bowing in GaAsN
2002
Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Theory of electronic structure evolution in GaAsN and GaPN alloys
2001
WIEN2k: An APW+lo program for calculating the properties of solids
2020 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Experimental studies of the conduction-band structure of GaInNAs alloys
2002
Evolution of the optical properties of III-V nitride alloys: Direct band-to-band transitions inGaN y P 1 − y ( 0 <~ y <~ 0 . 0 2 9 )
2002
Spatial variation of electrical properties in lateral epitaxially overgrown GaN
2001
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
2013 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy
2007 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Strain relaxation of GaN nucleation layers during rapid thermal annealing
2001
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
First-principles calculations of ELNES and XANES of selected wide-gap materials: Dependence on crystal structure and orientation
2004
Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)
2002
Empirical tight-binding model for the electronic structure of dilute GaNAs alloys
2003
Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy
2014 StandoutNobel
Self-consistentG W
2007 Standout
Novel aspects of the growth of nitrides by MOVPE
2001 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys
2002
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2000
High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD
2003
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Infrared dielectric functions and phonon modes of high-quality ZnO films
2002
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
Works of J. Šik being referenced
Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry
2000
Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy
2001
Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths
2001
Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
2000
Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
2000
Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
2001