Citation Impact
Citing Papers
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Solution-processed, high-performance light-emitting diodes based on quantum dots
2014 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
Growth and applications of Group III-nitrides
1998
Persistent photoconductivity in n-type GaN
1997
InGaN laser diodes with 50 mW output power emitting at 515 nm
2009
Enhanced GaN decomposition in H2 near atmospheric pressures
1998
TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes
2009
Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates
2009
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
2001 StandoutNobel
Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
2010
Polarization of III-nitride blue and ultraviolet light-emitting diodes
2005
Mechanics of laser-assisted debonding of films
2001
A comprehensive review of ZnO materials and devices
2005 Standout
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
2003
Selection of Metal Oxide Charge Transport Layers for Colloidal Quantum Dot LEDs
2009 StandoutNobel
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
1998
Some effects of oxygen impurities on AlN and GaN
2002
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies
1997
Emergence of colloidal quantum-dot light-emitting technologies
2012 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Effect of dislocations on thermal conductivity of GaN layers
2001
Quantum Dot Light-Emitting Devices with Electroluminescence Tunable over the Entire Visible Spectrum
2009 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Thermal stability of GaN investigated by Raman scattering
1998
Air-Stable Operation of Transparent, Colloidal Quantum Dot Based LEDs with a Unipolar Device Architecture
2009 StandoutNobel
Contact Printing of Quantum Dot Light-Emitting Devices
2008 StandoutNobel
Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
2003
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Superior Thermal Conductivity of Single-Layer Graphene
2008 Standout
Epitaxial Lateral Overgrowth of GaN
2001
Mass transport and the reduction of threading dislocation in GaN
2000 StandoutNobel
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
New light from hybrid inorganic–organic emitters
2008
Optical activation of Be implanted into GaN
1998 StandoutNobel
Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN
2006 StandoutNobel
Chlorine-Based Plasma Etching of GaN
1996
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
GaN: Processing, defects, and devices
1999
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio
2002 StandoutNobel
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
2013 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding
2006 StandoutNobel
Optical pump-and-probe measurement of the thermal conductivity of nitride thin films
2002
Thermal conductivity of GaN films: Effects of impurities and dislocations
2002
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
2004
White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode
2006
Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN
2003
Suppression of thermal conductivity in InxGa1−xN alloys by nanometer-scale disorder
2013
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures
2007
Thermal conduction in AlxGa1−xN alloys and thin films
2005
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Fermi level dependence of hydrogen diffusivity in GaN
2001
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
2008
Efficient CdSe/CdS Quantum Dot Light-Emitting Diodes Using a Thermally Polymerized Hole Transport Layer
2006
High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence
2000
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Nanoscale Morphology Revealed at the Interface Between Colloidal Quantum Dots and Organic Semiconductor Films
2010 StandoutNobel
Challenge to the Charging Model of Semiconductor-Nanocrystal Fluorescence Intermittency from Off-State Quantum Yields and Multiexciton Blinking
2010 StandoutNobel
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures
2007
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of J. Ramer being referenced
Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire
2003
The Microstructure of Metalorganic-Chemical-Vapor-Deposition GaN on Sapphire
1997
Influence of oxygen on the activation of p-type GaN
2000
Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development
2003
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003
Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal
1996
Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001)
2003
Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN
1996
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy
2000
Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN
1997
High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope
1999
Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen
1995
Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire
1999
Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar
1996
Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study
2005
A Study of the Effect of Growth Rate and Annealing on GaN Buffer Layers on Sapphire
1995