Citation Impact
Citing Papers
Physics of high-power InGaN/GaN lasers
2002 StandoutNobel
Deep levels in InxGa1-xAsyP1-ygrown on (100) GaAs by LPE
1989 StandoutNobel
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
1986 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Growth and characterization of InGaAsP lattice-matched to InP
1981
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers
1988 StandoutNobel
Empirical low-field mobility model for III–V compounds applicable in device simulation codes
2000
Immiscibility and spinodal decomposition in III/V alloys
1983
Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique
1982
Spinodal decomposition and clustering in III/V alloys
1982
Works of J. Ku being referenced
LPE and VPE In<inf>1-x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1-y</inf>/InP: Transport properties, defects, and device considerations
1981