Citation Impact
Citing Papers
Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE
1995 StandoutNobel
Electron transport through catechol-functionalized molecular rods
2013 StandoutNobel
Towards a definition of inorganic nanoparticles from an environmental, health and safety perspective
2009 Standout
Two-dimensional assembly and local redox-activity of molecular hybrid structures in an electrochemical environment
2005 StandoutNobel
Quasiparticle Effects on Tunneling Currents: A Study ofC 2 H 4 Si ( 001 ) ( 2 × 1 )
2001
Electrografting: a powerful method for surface modification
2011 Standout
Emerging Solvent‐Induced Homochirality by the Confinement of Achiral Molecules Against a Solid Surface
2008 StandoutNobel
Electronics using hybrid-molecular and mono-molecular devices
2000 StandoutNature
Electrospinning: A fascinating fiber fabrication technique
2010 Standout
Electronic and structural properties of vacancies on and below the GaP(110) surface
1998
Deposition of III-N thin films by molecular beam epitaxy
1994 StandoutNobel
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
Attractive step-step interactions, tricriticality, and faceting in the orientational phase diagram of silicon surfaces between [113] and [114]
1995
Deposition of Gan Films Using Seeded Supersonic Jets
1995 StandoutNobel
Dimerization of Sulfur Headgroups in 4-Mercaptopyridine Self-Assembled Monolayers on Au(111) Studied by Scanning Tunneling Microscopy
1998
Bioorganometallic Chemistry of Ferrocene
2004 Standout
Dissociative adsorption of O2 and H2O on Si(113): chemical shifts of the Si 2p level
1996
Enabling nanotechnology with self assembled block copolymer patterns
2003 Standout
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy
1989
Discrete Periodic Melting Point Observations for Nanostructure Ensembles
2000
Nonperturbative evaluation of STM tunneling probabilities fromab initiocalculations
1997
Mechanical properties of nanocrystalline materials
2005 Standout
Nanoscale Characterization of Surfaces and Interfaces
1994
Molecular beam epitaxy of nitride thin films
1993 StandoutNobel
The interaction of water with solid surfaces: fundamental aspects revisited
2002 Standout
Recent advances of conductive adhesives as a lead-free alternative in electronic packaging: Materials, processing, reliability and applications
2006 Standout
Atomic Layer Deposition: An Overview
2009 Standout
Growth of GaN(0001)1×1 on Al2O3(0001) by gas-source molecular beam epitaxy
1992
Structure and growth of self-assembling monolayers
2000 Standout
Molecular-Scale Electronics: From Concept to Function
2016 Standout
Nanostructured materials
2001
Theoretical Metastability of Semiconductor Crystallites in High-Pressure Phases, with Application to β-Tin Structure Silicon
1996 StandoutNobel
Determination of the absolute chirality of individual adsorbed molecules using the scanning tunnelling microscope
1998 Nature
The Ge Stranski-Krastanov growth mode on Si(001) (2 × 1) tested by X-ray photoelectron and Auger electron diffraction
1993
Formation of Covalently Attached Polymer Overlayers on Si(111) Surfaces Using Ring-Opening Metathesis Polymerization Methods
2001 StandoutNobel
X-ray photoelectron spectroscopy: Towards reliable binding energy referencing
2019 Standout
Dipole correction for surface supercell calculations
1999 Standout
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
1997 StandoutNobel
Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements
2000
Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level
1988
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Electron Transport in Molecular Wire Junctions
2003 StandoutScience
Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates
1992
Electronic excitations: density-functional versus many-body Green’s-function approaches
2002 Standout
Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
1997
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Interaction of π-Conjugated Organic Molecules with π-Bonded Semiconductor Surfaces: Structure, Selectivity, and Mechanistic Implications
2000
Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
1993
UHV STM I(V) and XPS Studies of Aryl Diazonium Molecules Assembled on Si(111)
2007
Equilibrium shape of Si
1993
Single-Molecule Electron Transfer in Electrochemical Environments
2008
Current-induced organic molecule–silicon bond breaking: consequences for molecular devices
2000
First principles calculation of the structure and energy of Si(113)
1992
Ab initio total energy study of adsorption and diffusion on the Si(100) surface
1996
High-resolution (GaAs) 1 − x Ge 2 ) x
1992
Emerging Solvent‐Induced Homochirality by the Confinement of Achiral Molecules Against a Solid Surface
2008 StandoutNobel
Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells
2015 StandoutNobel
Electronic Properties of Functional Biomolecules at Metal/Aqueous Solution Interfaces
2002
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Self-directed growth of molecular nanostructures on silicon
2000 Nature
Heterojunction band offset engineering
1996
Nanomaterials: a review of synthesis methods, properties, recent progress, and challenges
2021 Standout
Works of J. Knall being referenced
New method to study band offsets applied to strainedSi / Si 1 − x Ge x ( 100 )
1987
Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy
1989
Chemisorption of organic adsorbates on silicon and gold studied by scanning tunnelling microscopy
1992
Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy
1989
Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy
1989
Quantitative voltage-dependent STM image simulations for semiconductors
1992
Reconstruction of Si(113) by adsorption of atomic hydrogen
1991
Structure of Si(113) determined by scanning tunneling microscopy
1991
Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy
1988
Growth of Ge on Si(100) and Si(113) studied by STM
1992
STM imaging of molecules: factors affecting their reliable imaging
1992
An STM study of the chemisorption of C2H4 on Si(001)(2×1)
1993
Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth
1986
An STM study of the chemisorption of C2H4 on Si(001)(2 × 1)
1993