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Chemisorptive Luminescence: Oxygen on Si(111) Surfaces 1971 2026 1989 2007 25
  1. Chemisorptive Luminescence: Oxygen on Si(111) Surfaces (1971)
    Louis E. Brus, J. Comas The Journal of Chemical Physics

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Works of J. Comas being referenced

Chemisorptive Luminescence: Oxygen on Si(111) Surfaces
1971 StandoutNobel
Observation of Resonant Impurity States in Semiconductor Quantum-Well Structures
1985
Ion-excited UV lines useful for materials analysis
1978
Vacuum-Ultraviolet Continua from Rare-Gas Ion-Excitation of Solids
1979
Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering
1983
Iron doping in gallium arsenide by molecular beam epitaxy
1980
Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP
1992
Channeling and random equivalent depth distributions of 150 keV Li, Be, and B implanted in Si
1980
Ion Implantation Effects of Nitrogen, Boron, and Aluminum in Hexagonal Silicon Carbide
1972
Anomalous migration of ion-implanted Al in Si
1976
Oxygen sticking coefficients on clean (111) silicon surfaces
1969
Variations of energies and line shapes of the electroreflectance spectra of epitaxial AlxGa1−xAs
1987
Binding of Shallow Donor Impurities in Quantum-Well Structures
1985
Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions
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Negative differential resistance at 300 K in a superlattice quantum state transfer device
1984
Interband transitions in molecular-beam-epitaxial AlxGa1−xAs/GaAs
1985
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