Citation Impact
Citing Papers
Nanoparticles: Properties, applications and toxicities
2017 Standout
Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
2003 Standout
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
2012 Standout
Transparent Conductive Gas‐Permeation Barriers on Plastics by Atomic Layer Deposition
2013
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
2012 Standout
Liquid crystal display and organic light-emitting diode display: present status and future perspectives
2017 Standout
Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
2006
High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant
2003
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
Chemistry and band offsets of HfO2 thin films for gate insulators
2003
High dielectric constant oxides
2004 Standout
Physics of thin-film ferroelectric oxides
2005 Standout
Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2009
Raman scattering inHf x Zr 1 − x O 2
2005 StandoutNobel
Crystalline zirconia oxide on silicon as alternative gate dielectrics
2001
Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes
2005
Solid-Solution Nanoparticles: Use of a Nonhydrolytic Sol−Gel Synthesis To Prepare HfO2 and HfxZr1-xO2 Nanocrystals
2004 StandoutNobel
Energy-band alignments at ZrO2∕Si, SiGe, and Ge interfaces
2004
Atomic Layer Deposition: An Overview
2009 Standout
Systematic Studies on RE2Hf2O7:5%Eu3+ (RE = Y, La, Pr, Gd, Er, and Lu) Nanoparticles: Effects of the A-Site RE3+ Cation and Calcination on Structure and Photoluminescence
2016
Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process
2002
Dielectric breakdown in high-ε films for ULSI DRAMs
1993
Dielectric Properties of Zirconium Oxide Grown by Atomic Layer Deposition from Iodide Precursor
2001
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
1998
Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide
2001
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Atomic Layer Deposition of ZrO2 Thin Films Using Dichlorobis[bis‐(trimethylsilyl)amido]zirconium and Water
2004
Reaction–diffusion in high-k dielectrics on Si
2003
The restaurant at the end of the random walk: recent developments in the description of anomalous transport by fractional dynamics
2004 Standout
Metal–Oxide RRAM
2012 Standout
ZrO2Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
2002
Radiation Effects in MOS Oxides
2008 Standout
Perovskite lead-free dielectrics for energy storage applications
2018 Standout
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition
2002
Works of J. C. Lee being referenced
Electrical properties of ZrO2 gate dielectric on SiGe
2000
Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors
1990
Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
2006
Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices
2011
Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides
1995
Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)
2002
Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric
2001