Citation Impact
Citing Papers
Intrinsic carrier concentration and effective masses in InAs1−xSbx
1989
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Optical microcavities
2003 StandoutNature
Optical gain in silicon nanocrystals
2000 StandoutNature
Evaluation of advanced oxidation processes for water and wastewater treatment – A critical review
2018 Standout
Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
2012 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
The role of lattice strain in the phase equilibria of III-V ternary and quaternary semiconductors
1983
Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb
1998
Subpicosecond electrical sampling
1983 StandoutNobel
Enhanced T<inf>0</inf>values in GaSb/AlSb multiquantum well heterostructures
1987 StandoutNobel
Croissance par épitaxie en phase liquide et caractérisation d'alliages Ga1-xIoxAsySb1-y à paramètre de maille accordé sur celui de GaSb
1987
Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications
1996
Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport
1998 StandoutNobel
Interband optical properties of molecular-beam epitaxially grown GaAs1−xSbx on GaAs substrates
1999
Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
1977 Nobel
Direct observation of electron leakage in InGaAsP/InP double heterostructure
1982
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
1985 StandoutNobel
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
1998 StandoutNobel
Cyclotron resonance in n-type In1−xGaxAsyP1−y
1979 StandoutNobel
Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition
1983
In0.53Ga0.47As/InP heterojunctions with low interface defect densities
1991
Van der Waals heterostructures and devices
2016 Standout
The electronic structure of alloys and related heterojunctions
1997
Picosecond GaAs-based photoconductive optoelectronic detectors
1989 StandoutNobel
Substrate-Induced Stabilization of GaInPAs Epitaxial Layers on GaAs and InP
1984
LO-phonon oscillations and electron freeze-out in transport through In-InP and Sn-InP contacts
1987 StandoutNobel
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applications
1987
Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP
1987
The lasers behind the communications revolution
2002
LED revolution: fundamentals and prospects for UV disinfection applications
2017
Optical properties of high-quality InGaAs/InAlAs multiple quantum wells
1991 StandoutNobel
InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy
1982
Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate
1982
Heat-capacity study of two-dimensional electrons in GaAs/Al x Ga 1 − x
1992 StandoutNobel
Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In1-xGaxAs1-yPy on InP
1981
Optical properties ofIn 1 − x Ga x As y P 1 − y
1982
Measurements of intensity fluctuations of an InGaAsP external cavity laser
1984
GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
1980
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
1980
Staggered to straddling band lineups in InAs/Al(As, Sb)
1999 StandoutNobel
From amplified spontaneous emission to microring lasing using nanocrystal quantum dot solids
2002 StandoutNobel
Losses in GaInAs(P)/InP and GaAlSb(As)/GaSb lasers - The influence of the split-off valence band
1983
Photoluminescence of Mn- and Un-doped Ga0.47In0.53As on InP
1984
Auto lattice matching effect for allnas grown by MBE at high substrate temperature
1989
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
1999 StandoutNobel
Energy bandgap and lattice constant contours of II–VI quaternary alloys
1980
Band Structure of Ga1−xInxAs
1976
Near-equilibrium LPE growth of low threshold current density In1−xGaxAsyP1−y(λ=1.35 μm) DH lasers
1979
Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers
1981
LPE of buried heterostructure laser devices
1986
Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substrates
1982
Type II heterojunctions in the GaInAsSb/GaSb system
1994
Liquid-phase epitaxial growth of GaInAsSb with application to GaInAsSb/GaSb heterostructure diodes
1992
Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
1976
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Semiconducting and other major properties of gallium arsenide
1982 Standout
Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength
1980
High valence-band offset of GaSbAs-InAlAs quantum wells grown by molecular beam epitaxy
1992
Picosecond electro-optic sampling system
1982 StandoutNobel
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
1986 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Measurement of energy band gap using an electrolyte-semiconductor junction: Water–gallium indium arsenide alloys
1975
Electrical determination of band offsets in a p-Ga0.77In0.23As0.20Sb0.80/ n-GaSb type-II heterojunction
1993
Far-infrared spectroscopic study ofIn 1 − x Ga x As y P 1 − y
1980
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics
1994
III-V alloys for optoelectronic applications
1977
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Band gaps and spin-orbit splitting of ordered and disorderedAl x Ga 1 − x As Ga As x Sb 1 − x
1989
A new density matrix theory for semiconductor lasers, including non-Markovian intraband relaxation and its application to nonlinear gain
1991 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy
1984 StandoutNobel
Effect of Lattice Mismatch on the Solidus Compositions of GaxIn1-xP Liquid Phase Epitaxial Crystals
1983
Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures
1985
Band-gap and spin-orbit splitting of the lattice-matched GaAsSb/InAs system
1987
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Stability of bulk and pseudomorphic epitaxial semiconductors and their alloys
1988
Picosecond InP optoelectronic switches
1982
Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs
1988 StandoutNobel
Lattice vibrations of In1−xGaxAsyP1−y quaternary compounds
1978
Plasma separation of InGaAsP/InP light-emitting diodes
1980
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Growth and characterization of InGaAsP lattice-matched to InP
1981
Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
1990 StandoutNobel
Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnSxSe1-x
1987 StandoutNobel
Effects of two longitudinal optical-phonon modes on electron distribution in GaxIn1−xAsyP1−y
1982
Optical properties of molecular beam epitaxially grown GaAs1−xSbx (0<x<0.5) on GaAs and InP substrates
1988
Optical Properties of High-Quality Ga1-xInxAs1-ySby/InAs Grown by Liquid-Phase Epitaxy
1994
High-speed InGaAsP constricted-mesa lasers
1986
Spins in few-electron quantum dots
2007 Standout
E 0+Δ0 transitions in GaSb/AlSb quantum wells
1987 StandoutNobel
New graded band-gap picosecond phototransistor
1983
Using diode lasers for atomic physics
1991 StandoutNobel
Direct liquid phase epitaxial growth of high-quality InP on (111)A oriented In0.53Ga0.47As
1983
Monolithic two-section GaInAsP/InP active-optical-resonator devices formed by reactive ion etching
1981
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
The crystallization path: A way to the GaxIn1-xAsyP1-yphase diagram
1981
Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
1999
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Novel approach to the calculation of instability regions in GaInAsSb alloys
2000
Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling
2000
OMVPE growth of metastable GaAsSb and GaInAsSb alloys using TBAs and TBDMSb
1997
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs
1983
Field effect on thermal emission from the 0.40 eV electron level in InGaP
1993 StandoutNobel
Electronic structure and optical properties of the quaternary alloy Ga1 − xAlxAsySb1 − y
1996
Optical gain in semiconductors
1973
GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy
1986
Photoelectrolysis and physical properties of the semiconducting electrode WO2
1977 Standout
Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique
1982
Raman scattering in In1−xGaxAsyP1−y quaternary alloys
1986
LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique
1984
Subpicosecond electrooptic sampling: Principles and applications
1986 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs
1984 StandoutNobel
Picosecond photoconductivity in germanium films
1981
Miscibility gaps in quaternary III/V alloys
1982
Lasing in direct-bandgap GeSn alloy grown on Si
2015 Standout
Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP
1978
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility
1993 StandoutNobel
1977
Spinodal decomposition and clustering in III/V alloys
1982
Calculation of energy band gaps in quaternary iii/v alloys
1981
Infrared reflectivity studies of gax in1-x asy p1-y quaternary compounds
1981
Modulation-doped Ga0.47In0.53As/Al0.48In0.52As planar photoconductive detectors for 1.0–1.55-μm applications
1983
Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure
1994
Works of J. C. DeWinter being referenced
Large binding-energy variation and alloy disorder inIn 0.79 Ga 0.21 As 0.44 P 0.56
1984
An In0.53Ga0.47As junction field-effect transistor
1980
Continuous operation of 1.0-μm-wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double-heterostructure injection lasers at room temperature
1976
Ga-As liquidus at temperatures below 650 °C
1985
Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiver
1980
Growth and properties of liquid-phase epitaxial GaAs1−xSbx
1977
Temperature dependence of InGaAsP double-heterostructure laser characteristics
1979
Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
1980
The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap
1978
Stimulated emission and the type of bandgap in GaSe
1971
Growth and continuous compositional grading of GaAs1−x−zSbxPz by liquid phase epitaxy
1977
Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx double heterostructure LED’s in the 1-μm wavelength region
1975
Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm
1989
Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
1978
Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodes
1987
Low threshold ridge waveguide laser at 1.55 μm
1983
Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengths
1974
High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range
1986
Fast photoconductive detector using p-In0.53Ga0.47As with response to 1.7 μm
1981
Low-threshold InGaAsP ridge waveguide lasers at 1.3 µm
1983
Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm
1979
Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
1985
Growth and characterization of liquid−phase epitaxial InxGa1−xAs
1975