Citation Impact
Citing Papers
Towards Dynamic Control of Wettability by Using Functionalized Altitudinal Molecular Motors on Solid Surfaces
2013 StandoutNobel
Selective functionalization of patterned glass surfaces
2014 StandoutNobel
Growth and applications of Group III-nitrides
1998
Static solvent contact angle measurements, surface free energy and wettability determination of various self-assembled monolayers on silicon dioxide
2006
Physics of high-power InGaN/GaN lasers
2002 StandoutNobel
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Silicon nitride chemical vapor deposition from dichlorosilane and ammonia: theoretical study of surface structures and reaction mechanism
2001 StandoutNobel
The deposition of group III nitrides on silicon substrates
1979
Remote plasma deposition of aluminum nitride
1991
III-V nitrides for electronic and optoelectronic applications
1991 StandoutNobel
Low temperature deposition of AIN films by an alternate supply of trimethyl aluminum and ammonia
1996
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface
1996 StandoutNobel
Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia
2000 StandoutNobel
Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering
1997
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Temperature Dependence of Band Gap Change in InN and AlN
1994
Progress and prospects of group-III nitride semiconductors
1996
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN
2001 StandoutNobel
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
2000 StandoutNobel
Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride
1983 StandoutNobel
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
1979
The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process
1978
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE
2006 StandoutNobel
Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
1998 StandoutNobel
Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
The preparation, characterization and applications of silicon nitride thin films
1980
Plasma-enhanced chemical vapour deposition of AlN coatings on graphite substrates
1987
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
Structural characterization of Al1−In N lattice-matched to GaN
2000 StandoutNobel
Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
1999 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
2001 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Energy band gaps and lattice parameters evaluated with the Heyd-Scuseria-Ernzerhof screened hybrid functional
2005 Standout
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys
2001
Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
1998 StandoutNobel
Schottky barrier height and electron affinity of titanium on AlN
2000 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of J. Bauer being referenced
Optical properties, band gap, and surface roughness of Si3N4
1977
Surface tension, adhesion and wetting of materials for photolithographic process
1996
Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition
1977