Citation Impact
Citing Papers
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
2013
UWB theory and applications
2004
TEER Measurement Techniques for In Vitro Barrier Model Systems
2015 Standout
Room‐Temperature, Low‐Pressure Nanoimprinting Based on Cationic Photopolymerization of Novel Epoxysilicone Monomers
2005
Nanomoulding with amorphous metals
2009 StandoutNature
Heterogeneous Catalysis through Microcontact Printing
2008 StandoutNobel
An introduction to superhydrophobicity
2009 Standout
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
2012 Standout
Progess in superhydrophobic surface development
2007 Standout
Processing of Bulk Metallic Glass
2009 Standout
What do we need for a superhydrophobic surface? A review on the recent progress in the preparation of superhydrophobic surfaces
2007 Standout
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
Electrical Resistance of AgTS–S(CH2)n−1CH3//Ga2O3/EGaIn Tunneling Junctions
2012
Characterization of spin-coated gallium oxide films and application as surface passivation layer on silicon
2016
Roadmap on ultrafast optics
2016 StandoutNobel
Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2009
A review of Ga2O3 materials, processing, and devices
2018 Standout
Effect of Parasitic Capacitance on Impedance Measurement and Model Extraction
2009
Low‐T emperature MOCVD of Crystalline Ga2O 3 Nanowires using tB u3G a
2013
Structure and corrosion properties of thin TiO2 films obtained by magnetron sputtering
2019
Nanoimprint Lithography: Methods and Material Requirements
2007 Standout
Molecular-Scale Electronics: From Concept to Function
2016 Standout
Increased efficiency of light-emitting diodes incorporating anodes functionalized with fluorinated azobenzene monolayers and a green-emitting polyfluorene derivative
2012 StandoutNobel
Mixed Monolayers of Spiropyrans Maximize Tunneling Conductance Switching by Photoisomerization at the Molecule–Electrode Interface in EGaIn Junctions
2016 StandoutNobel
Synthesis, structural, strength and corrosion properties of thin films of the type CuX (X = Bi, Mg, Ni)
2019
Group‐III Sesquioxides: Growth, Physical Properties and Devices
2017
The use of high aspect ratio photoresist (SU-8) for super-hydrophobic pattern prototyping
2004
Research of the shielding effect and radiation resistance of composite CuBi2O4 films as well as their practical applications
2020 Standout
Surface Defects and Passivation of Ge and III–V Interfaces
2009
Connected Vehicles: Solutions and Challenges
2014 Standout
NLOS identification and mitigation for localization based on UWB experimental data
2010 Standout
Siloxane Copolymers for Nanoimprint Lithography
2006
Recent progress in nanoimprint technology and its applications
2004
Microstructural and electrical properties of Ga2O3 nanowires grown at various temperatures by vapor–liquid–solid technique
2009
Passively modelocked surface-emitting semiconductor lasers
2006
Hf-based high-k dielectrics for p-Ge MOS gate stacks
2013
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout
Works of Iain Thayne being referenced
50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node
2006
1 µm gate length, In 0.75 Ga 0.25 As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm
2008
Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics
2011
Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates
2003
Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond
2011
Ga 2 O 3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors
2007
Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$
2007
Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography
2002
Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors
2003
Terahertz repetition frequencies from harmonic mode-locked monolithic compound-cavity laser diodes
2001
Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices
2006
Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices
2011
Optical properties of refractory metal based thin films
2018
Metamorphic GaAs HEMTs with f T of 200 GHz
1999