Citation Impact
Citing Papers
Graphene‐Based Materials: Synthesis, Characterization, Properties, and Applications
2011 Standout
In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
1992 StandoutNobel
Recent advances in silicon epitaxy and its application to high performance integrated circuits
1984
An object-oriented framework for modular chemical process simulation with semiconductor processing applications
2006
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Rate-determining reactions and surface species in CVD of silicon
1980
Coating of glass by chemical vapor deposition
1981
Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy
1996 StandoutNobel
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
1986 StandoutNobel
Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates
1989 StandoutNobel
Rate-determining reactions and surface species in CVD silicon
1982
Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H-SiC{0001} vicinal surfaces
1994
The growth and structure of semiconducting thin films
1974
Nonlinear Finite-Element Analysis Software Architecture Using Object Composition
2009 Standout
Layer-by-layer epitaxial growth of GaN at low temperatures
1993 StandoutNobel
Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization
1996 StandoutNobel
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
1988 StandoutNobel
Nucleation and growth of thin films
1984 Standout
Nucleation and growth of silicon by CVD
1980
Graphene based materials: Past, present and future
2011 Standout
Novel metalorganic chemical vapor deposition system for GaN growth
1991 StandoutNobel
The preparation and properties of elemental semiconductor thin films
1973
Transparent conductors—A status review
1983 Standout
Molecular beam epitaxy
1975 Standout
Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst
2010
Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3
1984 StandoutNobel
Growth mechanism of 6H-SiC in step-controlled epitaxy
1993
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy
1994 StandoutNobel
Works of H.L. Peek being referenced
A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor
1970