Standout Papers

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Mod... 2007 2026 2013 2019 696
  1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (2007)
    Yasuhiro Uemoto, Masahiro Hikita et al. IEEE Transactions on Electron Devices

Immediate Impact

1 by Nobel laureates 1 from Science/Nature 45 standout
Sub-graph 1 of 17

Citing Papers

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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
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13 intermediate papers

Works of Hidetoshi Ishida being referenced

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
2018
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
2007 Standout
and 3 more

Author Peers

Author Last Decade Papers Cites
Hidetoshi Ishida 811 961 40 511 28 1.2k
Masakatsu Suzuki 248 833 16 337 34 1.1k
Yusuke Yoshizumi 325 733 17 258 27 1.0k
Muhammad Hunain Memon 543 543 18 511 41 1.2k
Yu-Ming Huang 673 477 4 130 38 1.0k
Simon M. Wood 895 497 5 233 18 1.3k
R. M. Fletcher 1179 885 5 189 28 1.7k
E Douglas 1072 889 5 632 70 1.5k
Chunhua Zhou 1126 889 2 475 57 1.4k
L.S. Tan 715 480 1 345 69 1.0k
Tomás Palacios 1004 1149 2 612 26 1.5k

All Works

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2026