Standout Papers
Citation Impact
Citing Papers
85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
2017
Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters
2012 StandoutNobel
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
2012 StandoutNobel
Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs
2010
Nanocrystal Quantum Dots: From Discovery to Modern Development
2021 StandoutNobel
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction
2009
Polarity Determination of Wurtzite and Zincblende Structures by TEM
2002
Blue Light Emitting Defective Nanocrystals Composed of Earth‐Abundant Elements
2019 StandoutNobel
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
2015
Light Emission Mechanisms in CuInS2 Quantum Dots Evaluated by Spectral Electrochemistry
2017
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films
2004 StandoutNobel
Formation of High-Quality I−III−VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors
2009
Magneto-Optical Properties of CuInS2 Nanocrystals
2014
High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE
2004 StandoutNobel
Direct water photoelectrolysis with patterned n-GaN
2007 StandoutNobel
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
2006 StandoutNobel
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
Solar Water Splitting Cells
2010 Standout
Ternary I−III−VI Quantum Dots Luminescent in the Red to Near-Infrared
2008 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Synthesis and Characterization of Colloidal CuInS2Nanoparticles from a Molecular Single-Source Precursor
2004
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy
2004
High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
2006 StandoutNobel
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Epitaxial lateral overgrowth techniques used in group III nitride epitaxy
2001
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
2006 StandoutNobel
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
2013 StandoutNobel
Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE
2006 StandoutNobel
Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI)
2017 StandoutNobel
GaN based nanorods for solid state lighting
2012
Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate
2009
A facile route to synthesize chalcopyrite CuInSe2nanocrystals in non-coordinating solvent
2006
Growth of embedded photonic crystals for GaN-based optoelectronic devices
2009
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
Epitaxial Lateral Overgrowth of GaN
2001
Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
2006
Single-Particle Photoluminescence Spectra, Blinking, and Delayed Luminescence of Colloidal CuInS2 Nanocrystals
2016
Directed Growth of Horizontally Aligned Gallium Nitride Nanowires for Nanoelectromechanical Resonator Arrays
2007
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates
2010
Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
2011 StandoutNobel
Luminescent Colloidal Semiconductor Nanocrystals Containing Copper: Synthesis, Photophysics, and Applications
2016
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?
2016
Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
2007
Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
2013 StandoutNobel
A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
2018
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN
2004
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
2001
Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique
2004
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
2012 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
2007 StandoutNobel
Bulk AlN growth by physical vapour transport
2014
Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth
2004 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
2008
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
High‐quality nonpolar m ‐plane GaN substrates grown by HVPE
2008
Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire
2003
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
2006 StandoutNobel
AlGaN-based laser diodes for the short-wavelength ultraviolet region
2009
Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures
2007
Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties
2003
Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells
2009 Standout
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2006 StandoutNobel
Bulk GaN crystals grown by HVPE
2009
Correlation between biaxial stress and free exciton transition in AlN epilayers
2007
A study of dislocations in AlN and GaN films grown on sapphire substrates
2005
Works of Hideto Miyake being referenced
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
2018
Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire
2016
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
2011
High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate
2003
Growth of Crack-Free and High-Quality AlGaN with High Al Content Using Epitaxial AlN (0001) Films on Sapphire
2002
Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle
2016
In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN
2009
Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams
2012
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
2005
Variation of Surface Potentials of Si-Doped AlxGa1-xN (0 <x< 0.87) Grown on AlN/Sapphire Template by Metal–Organic Vapor Phase Epitaxy
2010
Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
1998
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
2000
AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE
2011
Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency
2014
Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN
2012
Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
1999
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
2012
Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
2004
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
2017
Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth
2001
Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal
2014
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
2016
Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
2003
Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
2000
Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
1999
Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
1999
Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy
1999
High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy
2014
Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE
2008
n‐type conductivity control of AlGaN with high Al mole fraction
2006
Sharp band edge photoluminescence of high-purity CuInS2 single crystals
2001
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth
1999
Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE)
1998
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy
2013
Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template
2009
Carrier-gas dependence of ELO GaN grown by hydride VPE
2002