Citation Impact
Citing Papers
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
2003
Probing Superexchange Interaction in Molecular Magnets by Spin-Flip Spectroscopy and Microscopy
2008
Single‐Molecule Spin Switch Based on Voltage‐Triggered Distortion of the Coordination Sphere
2015 StandoutNobel
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
2012 Standout
Molecular spintronics
2011 Standout
Optical gain in single tensile-strained germanium photonic wire
2011
Electron photoemission from conducting nitrides (TiNx,TaNx) into SiO2 and HfO2
2005
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
2004
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2001
High dielectric constant oxides
2004 Standout
Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)
2004
Einzelmolekül‐Spinschalter auf Basis spannungsinduzierter Verzerrung der Koordinationssphäre
2015 StandoutNobel
Electrical properties of heavily doped polycrystalline silicon-germanium films
1994
Atomic Layer Deposition: An Overview
2009 Standout
Advantages of HfAlON gate dielectric film for advanced low power CMOS application
2005
Fermi level pinning and Hf–Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces
2004
Giant spin and orbital moment anisotropies of a Cu-phthalocyanine monolayer
2010
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2000 Standout
Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics
2013
Graphene-Like Two-Dimensional Materials
2013 Standout
Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
2011
Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffraction
2005
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks
2005
Scaling the gate dielectric: Materials, integration, and reliability
1999
Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices
2005
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics
2009
Low dielectric constant materials for microelectronics
2003 Standout
Atomic Layer Deposition of Hafnium Dioxide Films Using Hafnium Bis(2‐butanolate)bis(1‐methoxy‐2‐methyl‐2‐propanolate) and Water
2003
Reaction–diffusion in high-k dielectrics on Si
2003
Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe
2004
Impact of oxygen on the work functions of Mo in vacuum and on ZrO2
2005
Potential imaging of Si∕HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
2005
The restaurant at the end of the random walk: recent developments in the description of anomalous transport by fractional dynamics
2004 Standout
Spin crossover materials evaporated under clean high vacuum and ultra-high vacuum conditions: from thin films to single molecules
2012
Fragmentation and Distortion of Terpyridine-Based Spin-Crossover Complexes on Au(111)
2019 StandoutNobel
Time-dependent diffusivity of boron in silicon oxide and oxynitride
1999
Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides
2004 StandoutNobel
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water
2004
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
Lasing in direct-bandgap GeSn alloy grown on Si
2015 Standout
Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content
2013
Works of H.‐H. Tseng being referenced
Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
2004
The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
1990
Competitiveness between direct and indirect radiative transitions of Ge
2010
Low-Frequency Noise in Submicrometer MOSFETs With HfO<tex>$_2$</tex>, HfO<tex>$_2/hbox Al_2hbox O_3$</tex>and HfAlO<tex>$_x$</tex>Gate Stacks
2004
Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2
2002
Molecular Thin Films: A New Type of Magnetic Switch
2007
Compatibility of silicon gates with hafnium-based gate dielectrics
2003
Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
2013
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
2004
Strain-enhanced photoluminescence from Ge direct transition
2010
Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
2002