Standout Papers

Measurement of the ionization rates in diffused silicon p-n junctions 1970 2026 1988 2007 513
  1. Measurement of the ionization rates in diffused silicon p-n junctions (1970)
    R. Van Overstraeten, Harry de Man Solid-State Electronics

Immediate Impact

9 by Nobel laureates 2 from Science/Nature 61 standout
Sub-graph 1 of 17

Citing Papers

Roadmapping the next generation of silicon photonics
2024 Standout
Benchmarking monolayer MoS2 and WS2 field-effect transistors
2021 Standout
5 intermediate papers

Works of Harry de Man being referenced

Influence of heavy doping effects on the f T prediction of transistors
1973
Measurement of the ionization rates in diffused silicon p-n junctions
1970 Standout

Author Peers

Author Last Decade Papers Cites
Harry de Man 517 123 60 8 567
Y. Okuto 411 155 122 16 464
R. L. Batdorf 489 208 73 12 554
G. Gibbons 561 267 44 18 623
Adriana Lita 222 277 153 13 523
G. F. Amelio 336 162 25 13 507
C. W. Gabel 385 407 17 12 569
Ioana Craiciu 198 421 25 14 539
T. J. Soltys 440 309 7 5 577
V. Cantelli 104 149 15 17 462
C. Lenox 442 370 246 13 485

All Works

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2026