Citation Impact
Citing Papers
Methylammonium Chloride Induces Intermediate Phase Stabilization for Efficient Perovskite Solar Cells
2019 Standout
Mini-LED, Micro-LED and OLED displays: present status and future perspectives
2020 Standout
Blue Anti-Stokes Electroluminescence in GaN
1975
Edge luminescence of direct-gap semiconductors
1981
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Efficient perovskite solar cells via improved carrier management
2021 StandoutNatureNobel
Perovskite solar cells with atomically coherent interlayers on SnO2 electrodes
2021 StandoutNature
Universal Elastic Anisotropy Index
2008 Standout
Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxy
1973
Prospects for 100% wall-plug efficient III-nitride LEDs
2018
Radiative Efficiency Limit with Band Tailing Exceeds 30% for Quantum Dot Solar Cells
2017 StandoutNobel
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
1985 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
The incorporation and characterisation of acceptors in epitaxial GaAs
1975
Enhanced Lasing Properties of Dissymmetric Eu(III) Complex with Bidentate Phosphine Ligands
2007
Electron mobility and free-carrier absorption in InP; determination of the compensation ratio
1980
Gamma-Radiation Damage in Epitaxial Gallium Arsenide
1972
Interpretations of stratospheric photochemistry
1978
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windows
1986 Standout
High purity GaAs by liquid phase epitaxy
1969
Study of Zn-associated levels in GaN
1992 StandoutNobel
Electric properties of GaN : Zn MIS-type light emitting diode
1993 StandoutNobel
Negative electron affinity based vacuum collector transistor
1992
Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes
1992 StandoutNobel
Tabulated values of the Shockley–Queisser limit for single junction solar cells
2016 Standout
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
1971
Effects ofCo 60
1970
Chemical budgets of the stratosphere
1983 StandoutNobel
Semiconducting and other major properties of gallium arsenide
1982 Standout
Liquid-phase epitaxial growth of 6H-SiC by the dipping technique for preparation of blue-light-emitting diodes
1976 StandoutNobel
Imperfections and their passivation in halide perovskite solar cells
2019 Standout
Absorption Edge of Impure Gallium Arsenide
1965
Irradiation-induced defects in GaAs
1985 Standout
The chemical potential of radiation
1982
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
1988 StandoutNobel
UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC
1996 StandoutNobel
Band‐to‐Band Radiative Recombination in Groups IV, VI, and III‐V Semiconductors (I)
1967
Third generation photovoltaics: Ultra‐high conversion efficiency at low cost
2001
Solar conversion efficiency of photovoltaic and photoelectrolysis cells with carrier multiplication absorbers
2006 Standout
Low-voltage blue electroluminescence in GaN
1975
Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio
1979
Analysis of the August 1972 Solar Proton Event including chlorine chemistry
1981 StandoutNobel
Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection Lasers
1967
DX-like behavior of oxygen in GaN
2001 StandoutNobel
Vacancy Association of Defects in Annealed GaAs
1971 StandoutNobel
Concentration-dependent absorption and spontaneous emission of heavily doped GaAs
1976
Laser induced refractive index inhomogeneities and absorption saturation effects in CdS
1967 StandoutNobel
Molecular beam epitaxy
1975 Standout
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Using diode lasers for atomic physics
1991 StandoutNobel
Diode lasers coupled to external resonators
1979
Optical studies of the vibrational properties of disordered solids
1975
High-Efficiency Perovskite Solar Cells
2020 Standout
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Phase equilibria in ternary III–V systems
1972
Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article)
1974
Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxy
1975
Effect of band shapes on carrier distribution at high temperature
1968
Surface passivation of perovskite film for efficient solar cells
2019 Standout
Characterization of high purity GaAs grown by molecular beam epitaxy
1982 StandoutNobel
Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth
1981
Silicon doping of MBE-grown GaAs films
1983
Observations Concerning Radiative Efficiency and Deep-Level Luminescence in n-Type GaAs Prepared by Liquid-Phase Epitaxy
1968
Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)
1994 StandoutNobel
Quality of AlAs-like and InSb-like interfaces in InAs/AlSb superlattices: An optical study
1993 StandoutNobel
Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)
1967
Large losses of total ozone in Antarctica reveal seasonal ClOx/NOx interaction
1985 StandoutNature
Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers
1973
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Heavily doped semiconductors and devices
1978
Photoluminescence in Mn-implanted GaAs—An explanation on the ∼1.40-eV emission
1979
Localized vibrational modes in GaN:O tracing the formation of oxygenDX
2000 StandoutNobel
Works of H. Nelson being referenced
Comment on ‘NOxcatalytic ozone destruction: Sensitivity to rate coefficients’ by W. H. Duewer, D. J. Wuebbles, H. W. Ellsaesser, and J. S.Chang
1977
EFFICIENT ELECTRON EMISSION FROM GaAs–Al1−xGaxAs OPTOELECTRONIC COLD-CATHODE STRUCTURES
1971
EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAs
1963
Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation
1970
High-efficiency injection laser at room temperature
1964
AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE
1970
Epitaxial growth from the liquid state and its application to the fabrication of tunnel and lasar diodes
1963
Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase Epitaxy
1968
Low-threshold al<inf>x</inf>Ga<inf>1-x</inf>As visible and IR-light-emitting diode lasers
1970
Control of Optical Losses in p-n Junction Lasers by Use of a Heterojunction: Theory and Experiment
1970
Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase Epitaxy
1969
TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERS
1964
IMPROVED RED AND INFRARED LIGHT EMITTING AlxGa1−xAs LASER DIODES USING THE CLOSE-CONFINEMENT STRUCTURE
1969
Evidence of Refrigerating Action by Means of Photon Emission in Semiconductor Diodes
1964
Novel GaAs–(AlGa)As Cold-Cathode Structure and Factors Affecting Extended Operation
1972
New Deep-Level Luminescence in GaAs:Sn
1968
EFFICIENT PHOTOEMISSION FROM Ge-DOPED GaAs GROWN BY LIQUID-PHASE EPITAXY
1971