Citation Impact
Citing Papers
Disordered electronic systems
1985 Standout
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
2002 StandoutNobel
Raman and infrared studies on t r a n s-copoly(acetylene+acetylene-d2): Vibrational frequency dispersion and the origin of doping-induced absorptions
1984 StandoutNobel
Electrons in a four-dimensional disordered system
1976 StandoutNobel
White light-emitting diode based on fluorescent SiC
2012 StandoutNobel
Recent Advances and Industrial Applications of Multilevel Converters
2010 Standout
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
1996 Standout
A review of Ga2O3 materials, processing, and devices
2018 Standout
Lowest Fe2+spin excitations in disordered Fe1-xMnxCl2mixtures by microwave absorption at high frequencies
1980 StandoutNobel
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide
2001
On the stress in plasma-deposited a-SiC:H films
1993
Commercial impact of silicon carbide
2008
Raman scattering of HgCr2Se4
1978
Hydrogen incorporation and its temperature stability in SiC crystals
1997 StandoutNobel
Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance
2014 Standout
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
2001 StandoutNobel
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
1985
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams
2000
Mechanical properties of a-Si:H films studied by Brillouin scattering and nanoindenter
1990 StandoutNobel
Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions
1996 Standout
Design of junction termination structures for GaN Schottky power rectifiers
2003
Deposition and characterization of boron nitride thin films
1994 StandoutNobel
Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics
1998
Adhesion measurement of zirconium nitride and amorphous silicon carbide coatings to nickel and titanium alloys
1999 StandoutNobel
HVDC Circuit Breakers: A Review Identifying Future Research Needs
2011 Standout
Fundamentals of Power Semiconductor Devices
2008 Standout
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
1999
Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
2009
Performance evaluation of high-power wide band-gap semiconductor rectifiers
1999
Raman scattering in AlxGa1−xN alloys
1991 StandoutNobel
Power Conversion With SiC Devices at Extremely High Ambient Temperatures
2007
Single-mode behavior ofAlSb 1 − x As x
1992 StandoutNobel
A hybrid 6H-SiC temperature sensor operational from 25°C to 500°C
1996
Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
1995
A review of nuclear batteries
2014 Standout
Raman and x-ray studies of Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and Tb
1994 Standout
The Changing Automotive Environment: High-Temperature Electronics
2004 Standout
Spin-disorder-induced Raman scattering from phonons in europium chalcogenides. I. Experiment
1979 StandoutNobel
Simulation of SiC High Power Devices
1997
Some remarks on the electronic states in disordered materials
1981 StandoutNobel
Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor
2000
Phase transitions and heterophase fluctuations
1991 Standout
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
1997 StandoutNobel
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
The theory and properties of randomly disordered crystals and related physical systems
1974
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
1999 StandoutNobel
CoSi2 ohmic contacts to n-type 6HSiC
1995
The two-dimensional white noise problem and localisation in an inversion layer
1978 StandoutNobel
Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
1990
Works of H. Mitlehner being referenced
SiC devices: physics and numerical simulation
1994
Application-Oriented Unipolar Switching SiC Devices
2002
Hydrogen-related mechanical stress in amorphous silicon and plasma-deposited silicon nitride
1983
Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
2000
Periphery protection for silicon carbide devices: state of the art and simulation
1997
Far infrared and Raman investigation of Zn2+ doped MnF2 in the two-magnon region
1971
Infrared active phonons in CdCr2Se4
1971