Citation Impact
Citing Papers
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
2012
Charge transport in non-polar and semi-polar III-V nitride heterostructures
2012
First-principles calculations of indirect Auger recombination in nitride semiconductors
2015
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures
2014
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
2013
Electron-phonon interactions from first principles
2017 Standout
Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
2012
Design Strategies for InGaN-Based Green Lasers
2010
Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE
2012
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
2013 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
2013 StandoutNobel
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
2012
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Stable vicinal step orientations in m-plane GaN
2014 StandoutNobel
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
2013
Room temperature excitonic recombination in GaInN/GaN quantum wells
2013
Works of H. Jönen being referenced
Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces
2010
Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures
2011
Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy
2012
Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures
2013
Towards green lasing: ingredients for a green laser diode based on GaInN
2009
Auger recombination in GaInN/GaN quantum well laser structures
2011
Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
2011
High quality, high efficiency and ultrahigh In‐content InGaN QWs – the problem of thermal stability
2008