Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Optical gain in silicon nanocrystals
2000 StandoutNature
Covalent organic frameworks (COFs): from design to applications
2012 Standout
Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices
2016
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Raman study of free-standing porous silicon
1996
Generation and behavior of pure-edge threading misfit dislocations in InxGa1−xN∕GaN multiple quantum wells
2004
Effect of LED lighting on the cooling and heating loads in office buildings
2013 Standout
Localization-induced inhomogeneous screening of internal electric fields in AlGaN-based quantum wells
2007
Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate
2012
30-W/mm GaN HEMTs by Field Plate Optimization
2004 Standout
Luminescence properties of defects in GaN
2005 Standout
Impact of Point Defects on the Luminescence Properties of (Al,Ga)N
2008 StandoutNobel
The doping process and dopant characteristics of GaN
2002
Growth of nanowires
2008
Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
2004
Surface and optical analyses of porous silicon membranes
1994
GaN-Based RF Power Devices and Amplifiers
2008 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Some effects of oxygen impurities on AlN and GaN
2002
Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field
2009
The structural and luminescence properties of porous silicon
1997 Standout
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Inorganic nanoparticles in porous coordination polymers
2016 StandoutNobel
Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN∕GaN
2005
Growth and characteristics of Fe-doped GaN
2002
Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
2011 StandoutNobel
Compositional instability in strained InGaN epitaxial layers induced by kinetic effects
2011
Porous silicon: a quantum sponge structure for silicon based optoelectronics
2000
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
2001
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Droop improvement in high current range on PSS-LEDs
2011 StandoutNobel
Blue emission band in compensated GaN:Mg codoped with Si
2003
Confocal microphotoluminescence of InGaN-based light-emitting diodes
2005
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Resistivity control in unintentionally doped GaN films grown by MOCVD
2003
Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
2004 StandoutNobel
Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth
2013 StandoutNobel
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Light emitting diodes reliability review
2011
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Molecular structure of porous Si
1995
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
2002
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
2013 StandoutNobel
In situ photoluminescence spectral study of porous Si in HF aqueous solution
1994
Works of H. J. Lee being referenced
Light-emission phenomena from porous silicon: Siloxene compounds and quantum size effect
1994
Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers
2000
Codoping characteristics of Zn with Mg in GaN
2000
Yellow luminescence and persistent photoconductivity of undoped n-type GaN
2001
Dislocation behavior in InGaN/GaN multi-quantum-well structure grown by metalorganic chemical vapor deposition
2002
Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells
2003
Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source
1996
Correlation of optical and structural properties of light emitting porous silicon
1993
Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon
1993
Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells
2003
Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy
2001