Citation Impact
Citing Papers
Electronics based on two-dimensional materials
2014 Standout
Photoinduced work function changes by isomerization of a densely packed azobenzene-based SAM on Au: a joint experimental and theoretical study
2011 StandoutNobel
Highly active oxide photocathode for photoelectrochemical water reduction
2011 Standout
Nanometre-scale electronics with III–V compound semiconductors
2011 Nature
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
2012 Standout
Large Work Function Shift of Gold Induced by a Novel Perfluorinated Azobenzene‐Based Self‐Assembled Monolayer
2012 StandoutNobel
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
2012 Standout
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
2007
Platinum single-atom and cluster catalysis of the hydrogen evolution reaction
2016 Standout
Multiscale Charge Injection and Transport Properties in Self‐Assembled Monolayers of Biphenyl Thiols with Varying Torsion Angles
2012 StandoutNobel
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
CaTiO 3 linear dielectric ceramics with greatly enhanced dielectric strength and energy storage density
2017
Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2009
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
2008
Embroidered Conductive Fibers on Polymer Composite for Conformal Antennas
2012
Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
2011
Fiber‐Based Wearable Electronics: A Review of Materials, Fabrication, Devices, and Applications
2014 Standout
Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells
2012 StandoutNobel
π-Conjugated Polymers for Organic Electronics and Photovoltaic Cell Applications
2010 Standout
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
2010
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
2014 Standout
High Performance Solution-Processed Indium Oxide Thin-Film Transistors
2008
Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers
2013
Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications
2009
Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
2007
Atomic Layer Deposition: An Overview
2009 Standout
Transparent Triboelectric Nanogenerators and Self-Powered Pressure Sensors Based on Micropatterned Plastic Films
2012 Standout
Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors
2014
Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
2017 StandoutNobel
Materials for organic and hybrid inorganic/organic electronics
2010
Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer
2011
Stabilizing Nanostructured Solid Oxide Fuel Cell Cathode with Atomic Layer Deposition
2013 StandoutNobel
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Electroceramics for High-Energy Density Capacitors: Current Status and Future Perspectives
2021 Standout
III–V compound semiconductor transistors—from planar to nanowire structures
2014
High Performance Multilayer MoS2 Transistors with Scandium Contacts
2012 Standout
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout
Works of H. C. Lin being referenced
Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
2006
Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits
2009
Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
2007
High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
2006
On the interface state density at In0.53Ga0.47As/oxide interfaces
2009
The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
2009
Electrical Properties of III-V/Oxide Interfaces
2009
Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
2007
Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs
2005
Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
2009
Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
2006
Capacitance-voltage characterization of GaAs–Al2O3 interfaces
2008